2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.">2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput., dblp, computer science, bibliography, knowledge graph, author, editor, publication, conference, journal, book, thesis, database, collection, open data, bibtex">

default search action

combined dblp search
author search
venue search
publication search

ask others

"A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With ..."

Ken Takeuchi et al. (2007)

> Home

Details and statistics

DOI: 10.1109/JSSC.2006.888299

access: closed

type: Journal Article

metadata version: 2023-09-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/TakeuchiKFOHSWF07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/TakeuchiKFOHSWF07
Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56-nm CMOS 99-mm² 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. IEEE J. Solid State Circuits 42(1): 219-232 (2007)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.