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Jun Wan 0010
Person information
- affiliation: SanDisk, Milpitas, CA, USA
Other persons with the same name
- Jun Wan — disambiguation page
- Jun Wan 0001 — Chinese Academy of Sciences, Institute of Automation, Center for Biometrics and Security Research / National Laboratory of Pattern Recognition, Beijing, China (and 1 more)
- Jun Wan 0002 — Indiana University School of Medicine, Indianapolis, IN, USA (and 2 more)
- Jun Wan 0003 — Zhejiang University of Water Resources and Electric Power, Hangzhou, China
- Jun Wan 0004 — Chongqing University, Chongqing, China
- Jun Wan 0005 — Zhongnan University of Economics and Law, Wuhan, China (and 2 more)
- Jun Wan 0006 — Huazhong University of Science and Technology, Wuhan, China
- Jun Wan 0007 — Shandong University, Qingdao, China
- Jun Wan 0008 — Massachusetts Institute of Technology, Cambridge, MA, USA
- Jun Wan 0009 — Jiangxi University of Finance and Economics, Nanchang, China
- Jun Wan 0011 — Ant Financial Services, Hangzhou, China (and 1 more)
- Jun Wan 0012 — Northeastern University, Qinhuangdao, China
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2000 – 2009
- 2009
- [j2]Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul-Adrian Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader:
A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. IEEE J. Solid State Circuits 44(1): 195-207 (2009) - 2008
- [c2]Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jong Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader:
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. ISSCC 2008: 506-507 - 2007
- [j1]Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. IEEE J. Solid State Circuits 42(1): 219-232 (2007) - 2006
- [c1]Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. ISSCC 2006: 507-516
Coauthor Index
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