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Katsumi Dosaka
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2010 – 2019
- 2013
- [j22]Isamu Hayashi, Teruhiko Amano, Naoya Watanabe, Yuji Yano, Yasuto Kuroda, M. Shirata, Katsumi Dosaka, Koji Nii, Hideyuki Noda, Hiroyuki Kawai:
A 250-MHz 18-Mb Full Ternary CAM With Low-Voltage Matchline Sensing Scheme in 65-nm CMOS. IEEE J. Solid State Circuits 48(11): 2671-2680 (2013) - 2010
- [j21]Katsumi Dosaka, Daisuke Ogawa, Takahito Kusumoto, Masayuki Miyama, Yoshio Matsuda:
A Complete Charge Recycling TCAM with Checkerboard Array Arrangement for Low Power Applications. IEICE Trans. Electron. 93-C(5): 685-695 (2010)
2000 – 2009
- 2009
- [j20]Hiroki Shimano, Fukashi Morishita
, Katsumi Dosaka, Kazutami Arimoto:
On-Chip Memory Power-Cut Scheme Suitable for Low Power SoC Platform. IEICE Trans. Electron. 92-C(3): 356-363 (2009) - 2008
- [j19]Takeshi Kumaki, Masakatsu Ishizaki, Tetsushi Koide, Hans Jürgen Mattausch, Yasuto Kuroda, Takayuki Gyohten, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Kazunori Saito:
Integration Architecture of Content Addressable Memory and Massive-Parallel Memory-Embedded SIMD Matrix for Versatile Multimedia Processor. IEICE Trans. Electron. 91-C(9): 1409-1418 (2008) - 2007
- [j18]Takeshi Kumaki, Yasuto Kuroda, Masakatsu Ishizaki, Tetsushi Koide, Hans Jürgen Mattausch, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Kazunori Saito:
Real-Time Huffman Encoder with Pipelined CAM-Based Data Path and Code-Word-Table Optimizer. IEICE Trans. Inf. Syst. 90-D(1): 334-345 (2007) - [j17]Fukashi Morishita
A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI. IEICE Trans. Electron. 90-C(4): 765-771 (2007) - [j16]Takeshi Kumaki, Masakatsu Ishizaki, Tetsushi Koide, Hans Jürgen Mattausch, Yasuto Kuroda, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Kazunori Saito:
Acceleration of DCT Processing with Massive-Parallel Memory-Embedded SIMD Matrix Processor. IEICE Trans. Inf. Syst. 90-D(8): 1312-1315 (2007) - [j15]Hiroki Shimano, Fukashi Morishita
A Voltage Scalable Advanced DFM RAM with Accelerated Screening for Low Power SoC Platform. IEICE Trans. Electron. 90-C(10): 1927-1935 (2007) - [j14]Hideyuki Noda, Masami Nakajima, Katsumi Dosaka, Kiyoshi Nakata, Motoki Higashida, Osamu Yamamoto, Katsuya Mizumoto, Tetsushi Tanizaki, Takayuki Gyohten, Yoshihiro Okuno, Hiroyuki Kondo, Yukihiko Shimazu, Kazutami Arimoto, Kazunori Saito, Toru Shimizu:
The Design and Implementation of the Massively Parallel Processor Based on the Matrix Architecture. IEEE J. Solid State Circuits 42(1): 183-192 (2007) - [j13]Hideyuki Noda, Tetsushi Tanizaki, Takayuki Gyohten, Katsumi Dosaka, Masami Nakajima, Katsuya Mizumoto, Kanako Yoshida, Takenobu Iwao, Tetsu Nishijima, Yoshihiro Okuno, Kazutami Arimoto:
The Circuits and Robust Design Methodology of the Massively Parallel Processor Based on the Matrix Architecture. IEEE J. Solid State Circuits 42(4): 804-812 (2007) - [j12]Fukashi Morishita
A Configurable Enhanced TTRAM Macro for System-Level Power Management Unified Memory. IEEE J. Solid State Circuits 42(4): 853-861 (2007) - [j11]Kazutami Arimoto, Fukashi Morishita
A High-Density Scalable Twin Transistor RAM (TTRAM) With Verify Control for SOI Platform Memory IPs. IEEE J. Solid State Circuits 42(11): 2611-2619 (2007) - [c8]Takeshi Kumaki, Tetsushi Koide, Hans Jürgen Mattausch, Yasuto Kuroda, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Kazunori Saito:
Efficient Vertical/Horizontal-Space 1D-DCT Processing Based on Massive-Parallel Matrix-Processing Engine. ISCAS 2007: 525-528 - 2006
- [j10]Takayuki Gyohten, Fukashi Morishita
An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design. IEICE Trans. Electron. 89-C(11): 1519-1525 (2006) - [j9]Hideyuki Noda, Katsumi Dosaka, Hans Jürgen Mattausch, Tetsushi Koide, Fukashi Morishita
A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC. IEICE Trans. Electron. 89-C(11): 1612-1619 (2006) - [c7]Kazutami Arimoto, Fukashi Morishita
A Scalable ET2RAM (SETRAM) with Verify Control for SoC Platform Memory IP on SOI. CICC 2006: 429-432 - [c6]Masami Nakajima, Hideyuki Noda, Katsumi Dosaka, Kiyoshi Nakata, Motoki Higashida, Osamu Yamamoto, Katsuya Mizumoto, Hiroyuki Kondo, Yukihiko Shimazu, Kazutami Arimoto, Kazunori Saitoh, Toru Shimizu:
A 40GOPS 250mW massively parallel processor based on matrix architecture. ISSCC 2006: 1616-1625 - 2005
- [j8]Hideyuki Noda, Kazunari Inoue, Hans Jürgen Mattausch, Tetsushi Koide, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara:
Embedded Low-Power Dynamic TCAM Architecture with Transparently Scheduled Refresh. IEICE Trans. Electron. 88-C(4): 622-629 (2005) - [j7]Akira Yamazaki, Fukashi Morishita
A Study of Sense-Voltage Margins in Low-Voltage-Operating Embedded DRAM Macros. IEICE Trans. Electron. 88-C(10): 2020-2027 (2005) - [j6]Fukashi Morishita
A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications. IEEE J. Solid State Circuits 40(1): 204-212 (2005) - [j5]Hideyuki Noda, Kazunari Inoue, Masayuki Kuroiwa, Futoshi Igaue, Kouji Yamamoto, Hans Jürgen Mattausch, Tetsushi Koide, Atsushi Amo, Atsushi Hachisuka, Shinya Soeda, Isamu Hayashi, Fukashi Morishita
A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture. IEEE J. Solid State Circuits 40(1): 245-253 (2005) - [j4]Masahisa Iida, Naoki Kuroda, Hidefumi Otsuka, Masanobu Hirose, Yuji Yamasaki, Kiyoto Ohta, Kazuhiko Shimakawa, Takashi Nakabayashi, Hiroyuki Yamauchi
A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning. IEEE J. Solid State Circuits 40(11): 2296-2304 (2005) - [c5]Fukashi Morishita, Hideyuki Noda, Takayuki Gyohten, Mako Okamoto, Takashi Ipposhi, Shigeto Maegawa, Katsumi Dosaka, Kazutami Arimoto:
A capacitorless twin-transistor random access memory (TTRAM) on SOI. CICC 2005: 435-438 - [c4]Hideyuki Noda, Katsumi Dosaka, Fukashi Morishita, Kazutami Arimoto:
A soft-error-immune maintenance-free TCAM architecture with associated embedded DRAM. CICC 2005: 451-454 - [c3]Takeshi Kumaki, Yasuto Kuroda, Tetsushi Koide, Hans Jürgen Mattausch, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Kazunori Saito:
CAM-based VLSI architecture for Huffman coding with real-time optimization of the code word table [image coding example]. ISCAS (5) 2005: 5202-5205 - 2001
- [j3]Tadaaki Yamauchi, Mitsuya Kinoshita, Teruhiko Amano, Katsumi Dosaka, Kazutami Arimoto, Hideyuki Ozaki, Michihiro Yamada, Tsutomu Yoshihara:
Design methodology of embedded DRAM with virtual-socket architecture. IEEE J. Solid State Circuits 36(1): 46-54 (2001) - [c2]Yoshihiro Nagura, Michael Mullins, Anthony Sauvageau, Yoshinoro Fujiwara, Katsuya Furue, Ryuji Ohmura, Tatsunori Komoike, Takenori Okitaka, Tetsushi Tanizaki, Katsumi Dosaka, Kazutami Arimoto, Yukiyoshi Koda, Tetsuo Tada:
Test cost reduction by at-speed BISR for embedded DRAMs. ITC 2001: 182-187 - 2000
- [c1]Mitsuya Kinoshita, Tadaaki Yamauchi, Teruhiko Amano, Katsumi Dosaka, Kenshin Arimoto:
Design methodology of the embedded DRAM with the virtual socket architecture. CICC 2000: 271-274
1990 – 1999
- 1996
- [j2]Katsumi Dosaka, Akira Yamazaki, Naoya Watanabe, Hideaki Abe, Jun Ohtani, Toshiyuki Ogawa, Kazunori Ishihara, Masaki Kumanoya:
A 90-MHz 16-Mb system integrated memory with direct interface to CPU. IEEE J. Solid State Circuits 31(4): 537-545 (1996)
1980 – 1989
- 1989
- [j1]Yasuhiro Konishi, Masaki Kumanoya, Hiroyuki Yamasaki, Katsumi Dosaka, Tsutomu Yoshihara:
Analysis of coupling noise between adjacent bit lines in megabit DRAMs. IEEE J. Solid State Circuits 24(1): 35-42 (1989)
Coauthor Index
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