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BCICTS 2024: Fort Lauderdale, FL, USA
- IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024. IEEE 2024, ISBN 979-8-3315-4124-8
- Takuya Maeda, Yusuke Wakamoto, Atsushi Kobayashi:
Characterization of ScAlN/GaN Toward Electronic Device Application. 1-4 - Hoi Lee, Chen Chen, Weijie Han, Athul M. Sudha, Navaneeth Sri Easwaran, Jin Liu:
High-Efficiency High-Conversion-Ratio Power Delivery Circuits for Computing Applications. 1-4 - Samuel James Bader, Ahmad Zubair, Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif, Dimitri Frolov, Kaushik Narayanan, Jag Rangaswamy, Puneet Kanwar Kaur, Sanjeev Kumar, Nirmal Kundu, Shreyas Samraksh Jayaprakash, Abhijeet Khobragade, Yashwanth Pathivada, Qiang Yu, Jagannathan Vasudevan, Ibukun Momson, Said Rami, Heli Vora, Marko Radosavljevic, Pratik Koirala, Michael Beumer, Andrey Vyatskikh, Paul Nordeen, Thomas Hoff, Nachiket V. Desai, Han Wui Then:
Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS. 5-8 - Ivan Berdalovic, Dario Novakovic, Tomislav Suligoj:
Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers. 9-12 - Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger:
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. 13-17 - Mozhgan Hosseinzadeh, Milad Frounchi, George N. Tzintzarov, Jeffrey W. Teng, John D. Cressler:
High-Performance SiGe Heterojunction Phototransistor in a Commercial SiGe BiCMOS Platform for Free-Space Optical Receivers. 18-21 - Adam W. DiVergilio:
Practical Simulation and Test Strategies for Advanced Heterojunction Bipolar Transistors. 22-25 - J. P. John, J. Kirchgessner, J. J. T. M. Donkers, Peter H. C. Magnée, P. G. M. Sebel, R. Werkman, G. Anderson, Ihor Brunets, P. K. Uttwani, Mohamed G. Moinuddin, L. Radic, I. To, T. H. Both:
Towards 500GHz fMAX 140nm SiGe BiCMOS Technology for 5G/6G Applications. 26-29 - Lan Wei, Ryan Fang, Yijing Feng, Johan Alant, Daiyao Xu, Tanya Rampal, Ujwal Radhakrishna:
A Family of Physics-Based Models for Monolithic GaN Integration. 30-37 - Rafael Perez Martinez, Masaya Iwamoto, Ana M. Banzer Morgado, Yiao Li, Roberto Tinti, Jianjun Xu, Chad Gillease, Steven Cochran, Bhawani Shankar, Else-Marie Schmidt, Zijian Song, Natalie Wagner, Philipp Pahl, Alexander Petr, Srabanti Chowdhury:
A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology. 38-41 - Yasin Yüce, Sayed Ali Albahrani, Dirk Schwantuschke, Maxime Moulin, Arnulf Leuther:
Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model. 42-45 - Johan Alant, Ryan Fang, Yuxuan Zhang, Pilsoon Choi, Yijing Feng, Jessica Chong, Zev Pogrebin, Bin Lu, Ujwal Radhakrishna, Lan Wei:
Physics-Based Compact Model for GaN-Based Non-linear Transmission Line Resistors. 46-49 - Paul Shine Eugine, Peter Toth, Kaoru Yamashita, Sebastian Halama, Christian Ospelkaus, Hiroki Ishikuro, Vadim Issakov:
A Direct Digital Synthesizer-Based Arbitrary Waveform Generator for Envelope Modulation in Trapped-Ion Quantum Computer Operating at 4K. 50-53 - Zhaoqun Guo, Alexander Meyer, Adilet Dossanov, Paul Julius Ritter, Marius Neumann, Jens Repp, Matthias Brandl, Meinhard Schilling, Vadim Issakov:
A Low-Power, High-Swing LDMOS Driver Amplifier for Shuttling Controller in a Trapped-Ion Quantum Computer Operating at 4 K. 54-57 - Yerzhan Kudabay, Paul Julius Ritter, Vadim Issakov:
A Single-Stage 24 Gb/s 8: 1 Cryogenic Multiplexer for Josephson Arbitrary Waveform Synthesizer. 58-61 - Cristina Maurette-Blasini, Dirk Schwantuschke, Sayed Ali Albahrani, Peter Brückner, Konstantin Kuliabin, Sébastien Chartier, Rüdiger Quay:
ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies. 62-65 - Antony Abel Kunnath, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther:
Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT. 66-69 - Larry Dunleavy, Jiang Liu, Hugo Morales:
Practical Dimensions of Contemporary GaN Modeling. 70-75 - Rob D. Jones, Jerome Cheron, Benjamin F. Jamroz, Ari D. Feldman, Peter H. Aaen:
Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz. 76-79 - Antony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther:
Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. 80-83 - Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, G. Bonomo, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs. 84-87 - Tsunenobu Kimoto, M. Kaneko, Keita Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, N. Maeda:
An Overview of SiC High-Voltage Power Devices and High-Temperature ICs. 88-94 - X. Chen, A. Mistry, A. El Sayed, C. Williams, Lorenzo Iotti, A. Atef, Kishore Padmaraju, M. Malinowski, D. Che, Rafid A. Sukkar, Rick Younce, Alexandre Horth, Yury Dziashko, H. Guan, R. Shi, D. Gill, A. Seyoum, C. Marsh, M. Schmidt, G. Burrell, J. Basak, D. Chapman, A. Mikami, Alexander V. Rylyakov, A. Leven, Nicolas A. F. Jaeger:
802 Gbps Coherent Optical Sub-Assembly (COSA) based on a Coupling Modulated Silicon Ring Resonator. 95-98 - Qianli Ma, Sikai Chen, Jintao Xue, Yingjie Ma, Yuean Gu, Chao Cheng, Yihan Chen, Haoran Yin, Guike Li, Zhao Zhang, Nanjian Wu, Ke Li, Lei Wang, Ming Li, Chao Xiang, Binhao Wang, Nan Qi, Liyuan Liu:
A 64Gb/s Si-Photonic Micro-Ring Resonator Transceiver with Co-designed CMOS Driver and TIA for WDM Optical-IO. 99-102 - Mir H. Mahmud, Hasan Al-Rubaye, Gabriel M. Rebeiz:
Broadband Linear Drivers for 800G/1.6T Energy Efficient Optical Links. 103-106 - Christian Reimer:
Integrated Photonics in Thin-Film Lithium Niobate. 107-110 - Evgenii Fedorov, Vadim Issakov:
A compact low-loss Ku-Band 90° Hybrid Coupler for Front-End Modules in 45 nm SOI CMOS. 111-114 - Christian Bredendiek, Jan Wessel, Klaus Aufinger, Nils Pohl:
A Ku-Band SiGe: C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAE. 115-118 - Jim Sowers:
III-V Semiconductors in Commercial Communication Satellite Payloads. 119-125 - Wonho Lee, Everett O'Malley, James F. Buckwalter:
140-GHz Transmit and Receive Front-end Circuits with 10.8-dBm Psat and 5.9-dB NF in a 45-nm BiCMOS SOI Process. 126-129 - Thiemo Herbel, Mohsin Tarar, Frank Vater, Dietmar Kissinger:
A 130-GHz Bandwidth 61-dBOhm Variable-Gain Differential Linear TIA in a 130-nm SiGe: C BiCMOS Technology. 130-133 - Vinay Iyer, Christopher M. Moore, Prerana Singaraju, Matthew F. Bauwens, Steven M. Bowers, Robert M. Weikle:
Design of a Terahertz InP HBT Quadrupler and Silicon Interposer. 134-137 - Osian Jones, Taylor Barton:
Ka-Band MMIC Implementation of a Load-Modulating Loop Combiner Power Amplifier. 138-141 - David Dolt, Mingi Yeo, David Reents, Will Gouty, Tony Quach, Samuel Palermo:
The Design of Wideband LNAs in 45nm SiGe BiCMOS. 142-145 - V. Lasserre, S. Koop-Brinkmann, M. Caruso, D. Dal Maistro, G. Volpato, Q. H. Le, Thomas Kämpfe, C. Ziegler, Finn Stapelfeldt, Vadim Issakov:
A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS. 146-149 - Eren Vardarli, Austin Ying-Kuang Chen, Michael Schröter:
A 7.7-mW DC-to-62 GHz Ultra-Wideband Low-Noise Amplifier with ±2.1 ps Group Delay Variation and 3.3 dB NF in 0.13-μm SiGe: C BiCMOS. 150-153 - Lorenzo Serra, Guglielmo De Filippi, Lorenzo Piotto, Andrea Mazzanti:
A Biasing Scheme for the Gain Compression Point Optimization of HBT Cascode D-Band LNAs. 154-157 - Amirreza Alizadeh, Kwangwon Park, Saleh Hassanzadehyamchi, Utku Soylu, Miguel E. Urtega, Mark J. W. Rodwell:
A Low-Noise Amplifier in 130-nm InP HBT with 15.5 dB Gain and Record 5.3 dB Noise-Figure at 212 GHz. 158-161 - Hiroshi Hamada, Ibrahim Abdo, Takuya Tsutsumi, Hiroyuki Takahashi:
300-GHz 160-Gb/s InP-HEMT Wireless Front-End With Fully Differential Architecture. 162-165 - Teruo Jyo, Ibrahim Abdo, Hiroshi Hamada, Munehiko Nagatani, Adam Pander, Hitoshi Wakita, Miwa Mutoh, Yuta Shiratori, Daisuke Kitayama, Carrel da Gomez, Chun Wang, Kota Hatano, Chenxin Liu, Ashbir Aviat Fadila, Jian Pang, Atsushi Shirane, Kenichi Okada, Hiroyuki Takahashi:
300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter. 166-172 - Tiantong Ren, Yuan Chang, Brian A. Floyd:
A Q-band Phased-Array Transmit Beamformer in 45 nm CMOS SOI for SATCOM. 173-176 - Peter H. C. Magnée, R. Mandamparambil, P. Mattheijssen, Mustafa Acar, K. Giannakidis, X. Yang, Z. Chen, P. Freidl, J. J. T. M. Donkers, P. G. M. Sebel, Ihor Brunets, J. W. Bergman, Domine Leenaerts, A. Ghannam, Stig Danielsson, G. Bisht, M. Lal, W.-C. Liao, O. Tageman:
Full Antenna in Package Solution for 100GHz 6G infrastructure, in 140nm SiGe BiCMOS Technology. 177-180 - Haidong Guo, Suprovo Ghosh, Frank Zhang, Suhwan Lee, Wooyeol Choi, Shenggang Dong, O. Kenneth:
10-GSymbols/s Supply Modulated 250-GHz SiGe HBT Transmitter RF Front-End with 6.8-dBm Peak Modulated Power. 181-184 - Arno Hemelhof, Sehoon Park, Yang Zhang, Mark Ingels, Giuseppe Gramegna, Kristof Vaesen, Dongyang Yan, Piet Wambacq:
A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology. 185-188 - Eythan Lam, Jeff Shieh-Chieh Chien, Petra Rowell, Miguel Urteaga, James F. Buckwalter:
A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process. 189-192 - Eric W. Bryerton, Jeffrey L. Hesler:
Trends in Millimeter-Wave and THz Test Equipment. 193-198 - Jonathan Tao, James F. Buckwalter:
A D-band SiGe Subharmonic Downconverter with Dynamic Conversion Gain and Fixed Input Compression. 199-202 - Christopher Chen, Yan Zhang, Hao-Yu Chien, Jiazhang Song, Jia Zhou, Chao-Jen Tien, Sudhakar Pamarti, Chih-Kong Ken Yang, Mau-Chung Frank Chang:
A Sub-Sampling 35GHz PLL in 45nm PDSOI BiCMOS with 37fs Integrated Jitter and a FoM of -252dB. 203-206 - Alysoha Molnar:
N-Path Mixers Beyond CMOS. 207-212 - Daniel Kuzmenko, Harris Moyer, Jana Georgieva, Tai Haw, Stephen A. Maas:
W-band GaN Resistive FET I-Q Mixer MMICs with Low Conversion Loss. 213-216 - Shah Zaib Aslam, Najme Ebrahimi:
A 10 Gb/s, 120 GHz Compact and Energy-Efficient Harmonic-OOK Modulator using 90 nm SiGe BiCMOS. 217-220 - Sidharth Thomas, Benyamin Fallahi Motlagh, Aydin Babakhani:
A 132-204 GHz Carrier Storage Frequency Divider with sub-50 Micro-Watt DC Power. 221-224 - Israel Tapia, Eren Vardarli, Ciro Esposito, Michael Schröter:
A Novel Approach to Zero Ω Transmission Line Analysis and Design at W-Band and Beyond. 225-228 - Steven Callender, Abhishek Agrawal, Amy Whitcombe, Stefano Pellerano:
D-Band meets FinFET: Fully-Integrated Transmitter and Receiver Architectures for 100+Gb/s Links. 229-236 - Ankita Ankita, Mihilat Manahile, Shih-Chun Tsu, Ali Ebadi Yekta, Terry Alford, Stephen M. Goodnick, Robert J. Nemanich, Trevor J. Thornton:
Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT? 237-242 - Bernhard Grote, David Yu-Ting Wu, Bruce Green, Raphael Holin, David Burdeaux, Philippe Renaud, Humayun Kabir, Patrick Hu:
Advances in GaN HEMT and GaN Power Amplifier Techniques for Base-Stations. 243-249 - Michael Litchfield, Qin Shen-Schultz, Bernard Schmanski:
Ka-Band, Reactively Matched Non-Uniform Distributed Power Amplifier MMICs in GaN-on-SiC. 250-253 - Pingzhu Gong, Jiachen Guo, Kenle Chen:
Load-Modulated Balanced Amplifiers for Next-G Wireless Communications. 254-257 - Robin Ying, Joe Tai:
A 19.1-dBm-Linear 2-20 GHz N-path Down-converter in HRL 40-nm GaN for Resilient Receivers. 258-261 - Vijayalakshmi Surendranath Shroff, Meysam Bahmanian, Stephan Kruse, Johann-Christoph Scheytt:
Design of an Ultra-Low Phase Noise Broadband Amplifier in 130 nm SiGe BiCMOS Technology. 262-265 - Dimitre Dimitrov, Mark D. Hickle, Matthew Speir, Joseph M. Krzyzek, Daniel P. Lacroix, Shail Srinivas, Robert Sepanek, Spencer Desrochers, Steven Eugene Turner:
Single-Chip 30 GHz SiGe Sub-Sampling PLL with 28.3 fs Jitter. 266-269 - Dimitris P. Ioannou, Adam W. DiVergilio:
High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs. 270-273 - Xiaodi Jin, Prateek Kumar, Michael Schröter:
On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic Temperatures. 274-277 - Justin P. Heimerl, Jeffrey W. Teng, Harrison P. Lee, Delgermaa Nergui, Jackson P. Moody, John D. Cressler:
TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian Optimization. 278-281 - Filip Bogdanovic, Lovro Markovic, Azra Tabakovic, Josip Zilak, Marko Koricic, Tomislav Suligoj:
The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor's (HCBT) Beta Recovery at Cryogenic Temperatures. 282-285 - Nelson Sepúlveda-Ramos, Harrison P. Lee, Jeffrey W. Teng, John D. Cressler:
Using Pulsed-Mode Measurements of SiGe HBTs for Non-Destructive, Improved RF-SOA Estimation. 286-289 - Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter:
On the Safe Operating Area of InP HBTs. 290-293 - Zlatan Stanojevic, Xaver Klemenschits, Gerhard Rzepa, Ferdinand Mitterbauer, Christian Schleich, Franz Schanovsky, Oskar Baumgartner, Markus Karner:
TCAD for Circuits and Systems: Process Emulation, Parasitics Extraction, Self-Heating. 294-297 - Randy Wolf, Vibhor Jain, Sameer Jain, Shafi Syed, Chi Zhang, Abdellatif Bellaouar, Arul Balasubramaniyan, Sujata Ghosh, Rebouh Benelbar, Liyou Lu:
SiGe and CMOS Technologies for Wireless PA Applications. 298-305
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