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Gerhard Rzepa
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2020 – today
- 2022
- [c13]Gautam Gaddemane, Krishna K. Bhuwalka, Philippe Matagne, Gerhard Rzepa, Maarten L. Van De Put, Sybren Santermans, Oskar Baumgartner
, Hao Wu, Geert Hellings:
Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology. ESSDERC 2022: 265-268 - 2021
- [c12]Yisuo Li, Ken'ichi Kanazawa, Tetsuo Izawa, Koji Sakui, Georg Strof, Oskar Baumgartner
1.5-nm Node Surrounding Gate Transistor (SGT)-SRAM Cell with Staggered Pillar and Self-Aligned Process for Gate, Bottom Contact, and Pillar. IMW 2021: 1-4 - [c11]Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW 2021: 1-4 - [c10]Gerhard Rzepa, Markus Karner, Oskar Baumgartner
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS 2021: 1-6 - 2020
- [c9]Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS 2020: 1-6 - [c8]Jakob Michl
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c7]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - [c6]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - 2018
- [j3]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [j2]Gerhard Rzepa
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [j1]Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87: 286-320 (2018) - [c5]Tibor Grasser, Bernhard Stampfer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - 2017
- [c4]Theresia Knobloch
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC 2017: 284-287 - 2015
- [c3]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c2]Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser:
Characterization and modeling of reliability issues in nanoscale devices. ISCAS 2015: 2445-2448 - 2014
- [c1]Tibor Grasser
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4
Coauthor Index
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