William Bradford Shockley
| William Bradford Shockley | |
 | |
| Rođenje | 13. veljače 1910. London, Ujedinjeno Kraljevstvo |
|---|---|
| Smrt | 12. kolovoza 1989. Stanford, Kalifornija, SAD |
| Državljanstvo | SAD |
| Polje | fizika |
| Institucija | Bell Labs Shockley Semiconductor Stanford |
| Alma mater | Caltech MIT |
| Akademski mentor | John C. Slater |
| Poznat po | suizumitelj tranzistora |
| Istaknute nagrade | Nobelova nagrada za fiziku (1956.) |
| Religija | ateist |
William Bradford Shockley (London, 13. veljače 1910. - Stanford, 12. kolovoza 1989.), američki fizičar i izumitelj. U suradnji s Johnom Bardeenom i Walterom Houserom Brattainom, Shockley je izumio tranzistor, za kojeg su sva trojica nagrađena Nobelovom nagradom za fiziku 1956.
Shockleyjevi pokušaji komercijalizacije novog dizajna tranzistora 1950-ih i 1960-ih dovela su do postanka Silicijske doline u kolijevku elektroničkih inovacija. U kasnijem razdoblju života, Shockley je predavao kao profesor na Stanford Universityju i postao snažan zagovaratelj eugenike.[1]
Shockleyju je odobreno preko devedeset patenata u SAD-u. Neki značajniji su:
- US patent 2502488 Arhivirano 2021-03-11 na Wayback Machine-u "Semiconductor Amplifier". Zahtjev podnesen 24. rujna 1948; njegov prvi odobreni patent koji je uključivao tranzistore.
- US patent 2569347 Arhivirano 2021-03-11 na Wayback Machine-u "Circuit element utilizing semiconductive material". Njegov najraniji podneseni zahtjev za patentom (26. lipnja 1948.) koji je uključivao tranzistore.
- US patent 2655609 Arhivirano 2021-03-11 na Wayback Machine-u "Bistable Circuits". Zahtjev podnesen 22. srpnja 1952.; Korišten u računalima.
- US patent 2787564 Arhivirano 2021-03-11 na Wayback Machine-u "Forming Semiconductive Devices by Ionic Bombardment". Zahtjev podnesen 28. listopada 1954.; Difuzivni proces za implantaciju nečistoća.
- US patent 3031275 Arhivirano 2021-03-11 na Wayback Machine-u "Process for Growing Single Crystals". Zahtjev podnesen 20. veljače 1959.; Poboljšanja procesa za dobivanje osnovnih materijala.
- US patent 3053635 Arhivirano 2021-03-11 na Wayback Machine-u "Method of Growing Silicon Carbide Crystals". Zahtjev podnesen 26. rujna 1960.; Istražuje ostale semikonduktore.
- An Electron Microscope for Filaments: Emission and Adsorption by Tungsten Single Crystals, R. P. Johnson and W. Shockley, Phys. Rev. 49, 436 - 440 (1936).
- Optical Absorption by the Alkali Halides, J. C. Slater and W. Shockley, Phys. Rev. 50, 705 - 719 (1936).
- Electronic Energy Bands in Sodium Chloride, William Shockley, Phys. Rev. 50, 754 - 759 (1936).
- The Empty Lattice Test of the Cellular Method in Solids, W. Shockley, Phys. Rev. 52, 866 - 872 (1937).
- On the Surface States Associated with a Periodic Potential, William Shockley, Phys. Rev. 56, 317 - 323 (1939).
- The Self-Diffusion of Copper, J. Steigman, W. Shockley and F. C. Nix, Phys. Rev. 56, 13 - 21 (1939).
- Shockley, William – Electrons and holes in semiconductors, with applications to transistor electronics, Krieger (1956) ISBN 0-88275-382-7.
- Shockley, William – Mechanics Merrill (1966).
- Shockley, William and Pearson, Roger – Shockley on Eugenics and Race: The Application of Science to the Solution of Human Problems Scott-Townsend (1992) ISBN 1-878465-03-1.
- Joel N. Shurkin; Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age. New York: Palgrave Macmillan (2006) ISBN 1-4039-8815-3
- Michael Riordan and Lillian Hoddeson; Crystal Fire: The Invention of the Transistor and the Birth of the Information Age. New York: Norton (1997) ISBN 0-393-31851-6 pbk.
- ↑ (en)„William B. Shockley, 79, Creator of Transistor and Theory on Race”. New York Times. 14 August 1989. Pristupljeno 2007-07-21. »William Bradford Shockley, who shared a Nobel Prize in physics for his role in the creation of the transistor and earned the enmity of many for his views on the genetic differences between the races, died of cancer of the prostate at his home in California on Saturday. He was 79 years old and lived on the campus of Stanford University.«
