Arsenidogermanates are chemical compounds that contain anions with arsenic bonded to germanium. They are in the category of tetrelarsenides, pnictidogermanates, or tetrelpnictides.
Germanium forms two arsenides: GeAs and GeAs2.[1]
List
editname | formula | formula
weight |
crystal
system |
space
group |
unit cell | volume | density | comments | ref |
---|---|---|---|---|---|---|---|---|---|
LiGe3As3 | orthorhombic | Pbam | a=10.0862 b=15.7612 c=3.7403 Z=4 | 594.60 | 5.01 | [2] | |||
Li5GeAs3 | black | [3] | |||||||
NaGe6As6 | 908.05 | monoclinic | C2/m | a = 22.063, b = 3.8032, c = 7.2020, β = 92.744°, Z = 2 | 603.64 | 5.00 | needles | [4] | |
Na10Ge2As6 | monoclinic | P121/n1 | a=13.531 b=7.544 c=8.298 β = 90.2° Z=2 | 847.0 | [5] | ||||
K2GeAs2 | orthorhombic | Ibam | a = 13.292, b = 7.028, c = 6.548 Z = 4 | moisture sensitive needles | [6] | ||||
KGe3As3 | 481.53 | orthorhombic | Pnma | a=9.993, b=3.7664, c=18.607 Z=4 | 700.34 | 4.568 | [7] | ||
K2Ge3As3 | 520.73 | orthorhombic | Pnnm | a=14.1466 b=16.300 c=3.7489 Z=4 | 864.47 | 4.001 | fibrous metallic | [8] | |
K2NaGaAs2 | Ibam | a=6.733 b=14.809 c=6.574 Z=4 | 655.5 | 3.250 | [9] | ||||
KCdGeAs2 | triclinic | P1 | a = 8.004, b = 8.402, c = 8.703, α = 71.019°, β = 75.257°, γ = 73.746°, Z=4 | band gap 0.8 eV; Ge2As6 units | [10] | ||||
RbCdGeAs2 | triclinic | P1 | a = 8.269, b = 8.452, c = 8.735, α = 71.163°, β = 75.601°, γ = 73.673°, Z=4 | Ge2As6 units | [10] | ||||
Sr3Ge2As4 | red metallic; 1D As3GeGeAs3 units | [11] | |||||||
K5In5Ge5As14 | monoclinic | C2/m | a=40.00,b=3.925,c=10.299, β=99.97°, Z=8 | 1592 | 4.55 | air sensitive; layered | [12] | ||
K8In8Ge5As17 | monoclinic | P21/c | a=18.394,b=19.087,c=25.360, β=105.71°, Z=4 | 8571 | 4.45 | air sensitive; layered | [12] | ||
RbGe3As3 | 528 | orthorhombic | Pnma | a=10.166 b=3.7595 c=19.028 Z=4 | 727.2 | 4.823 | [7] | ||
Rb(Ge1.5In0.5)As2(As1.5Ge0.5) | orthorhombic | Cmc21 | a = 3.799, b = 16.50, c = 12.24, Z = 4 | 767 | 4.589 | [13] | |||
RbXGe2−XInXAs4 | [13] | ||||||||
I8As21Ge25 | 4403 | cubic | Pm3n | a=10.5963 Z=1 | 1189.8 | 6.1431 | colourless | [14] | |
Cs5GeAs3 | metallic; unstable in air; GeAs3 units | [15] | |||||||
BaGe2As2 | tetragonal | P42mc | a=7,786 c=8.664 Z=4 | 525.2 | 5.47 | metallic | [16] | ||
Ba4GeAs4 | dark metallic; GeAs4 units | [17] | |||||||
Re3Ge0.6As6.4 | [18] | ||||||||
Re3GeAs6 | 1080.75 | cubic | Im3m | a = 8.73202 Z=4 | 665.75 | 10.78 | n-type semiconductor | [18] | |
AuGeAs | monoclinic | Cc | a 7.2729, b 6.2953, c 6.3067, β 119.209° | [19] | |||||
KXGe2−XTlXAs4 | [13] |
References
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- ^ Mark, Justin; Hanrahan, Michael P.; Woo, Katherine E.; Lee, Shannon; Rossini, Aaron J.; Kovnir, Kirill (2 May 2019). "Chemical and Electrochemical Lithiation of van der Waals Tetrel‐Arsenides". Chemistry – A European Journal. 25 (25): 6392–6401. doi:10.1002/chem.201900339. OSTI 1526289. PMID 30887569. S2CID 83463348.
- ^ Juza, Robert; Schulz, Werner (February 1954). "Ternäre Phosphide und Arsenide des Lithiums mit Elementen der 3. und 4. Gruppe". Zeitschrift für anorganische und allgemeine Chemie (in German). 275 (1–3): 65–78. doi:10.1002/zaac.19542750107. ISSN 0044-2313.
- ^ Khatun, Mansura; Mar, Arthur (2016-05-01). "NaGe6As6: Insertion of sodium into the layered semiconductor germanium arsenide GeAs". Zeitschrift für Naturforschung B. 71 (5): 375–380. doi:10.1515/znb-2015-0203. ISSN 1865-7117. S2CID 197298002.
- ^ Eisenmann, B.; Klein, J.; Somer, M. (1991-02-01). Eisenmann, B.; Klein, J.; Somer, M. (eds.). "Crystal structure of decasodium di-μ-arsenido-bis(diarsenidogermanate), Na10Ge2As6". Zeitschrift für Kristallographie - Crystalline Materials. 197 (3–4): 265–266. Bibcode:1991ZK....197..265E. doi:10.1524/zkri.1991.197.3-4.265. ISSN 2194-4946.
- ^ Eisenmann, Brigitte; Klein, Jürgen (September 1991). "SiS2-isostrukturelle Anionen [SiP22−], [GeAs22−] und [SnAs22−] in Alkaliverbindungen". Journal of the Less Common Metals (in German). 175 (1): 109–117. doi:10.1016/0022-5088(91)90355-8.
- ^ a b Khatun, Mansura; Stoyko, Stanislav S.; Mar, Arthur (June 2016). "Ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) with layered structures". Journal of Solid State Chemistry. 238: 229–235. Bibcode:2016JSSCh.238..229K. doi:10.1016/j.jssc.2016.03.035.
- ^ Eulenstein, Armin R.; Bogdanovski, Dimitri; Reinhardt, Hendrik; Miß, Vanessa; Roling, Bernhard; Hampp, Norbert; Dronskowski, Richard; Dehnen, Stefanie (12 November 2019). "K2Ge3As3: Fiberlike Crystals of a Narrow-Band-Gap Zintl Phase with a One-Dimensional Substructure ∞1{(Ge3As3)2–}". Chemistry of Materials. 31 (21): 8839–8849. doi:10.1021/acs.chemmater.9b02827. S2CID 204116281.
- ^ Somer, Mehmet; Peters, Karl; von Schnering, Hans Georg (July 1992). "K2NaGaP2, Cs2NaGaP2, K2NaGaAs2, K2NaInP2 und K2NaInAs2, Verbindungen mit den SiS2-isosteren Polyanionen ∞
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- ^ a b Shreeve-Keyer, Julie L; Haushalter, Robert C; Lee, Young-Sook; Li, Sichu; O'Connor, Charles J; Seo, Dong-Kyun; Whangbo, Myung-Hwan (May 1997). "New Layered Materials in the K–In–Ge–As System: K8In8Ge5As17 and K5In5Ge5As14". Journal of Solid State Chemistry. 130 (2): 234–249. Bibcode:1997JSSCh.130..234S. doi:10.1006/jssc.1996.7210.
- ^ a b c Shreeve-Keyer, Julie L.; Haushalter, Robert C. (1996), Kajimura, Koji; Kuroda, Shin-ichi (eds.), "Synthesis and Structural Characterization of a Quaternary Zintl Phase Material from the Rb:Ge:In:As System: Rb(Ge1.5ln0.5)As2(As1.5Ge0.5)", Materials and Measurements in Molecular Electronics, Springer Proceedings in Physics, vol. 81, Tokyo: Springer Japan, pp. 139–150, doi:10.1007/978-4-431-68470-1_11, ISBN 978-4-431-68472-5, retrieved 2021-12-08
- ^ Ayouz, Katia; Kars, Mohammed; Rebbah, Allaoua; Rebbah, Houria (15 March 2009). "I8As21Ge25". Acta Crystallographica Section E. 65 (3): i15. doi:10.1107/S1600536809004991. PMC 2968696. PMID 21582033.
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- ^ Eisenmann, Brigitte; Schäfer, Herbert (1981-04-01). "Zintlphasen mit binären Anionen: Zur Kenntnis von BaGe2P2 und BaGe2As2 / Zintl Phases with Binary Anions: BaGe2P2 and BaGe2As2". Zeitschrift für Naturforschung B. 36 (4): 415–419. doi:10.1515/znb-1981-0403. ISSN 1865-7117. S2CID 95993285.
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