FJG RAM

This article has multiple issues. Please help improve it or discuss these issues on the talk page. (Learn how and when to remove these messages) This article relies excessively on references to primary sources. Please improve this article by adding secondary or tertiary sources. Find sources: "FJG RAM" – news · newspapers · books · scholar · JSTOR (March 2023) (Learn how and when to remove this message) ‹ The template below (Promotional) is being considered for merging. See templates for discussion to help reach a consensus. › This article contains promotional content. Please help improve it by removing promotional language and inappropriate external links, and by adding encyclopedic text written from a neutral point of view. (September 2013) (Learn how and when to remove this message) (Learn how and when to remove this message)

FJG RAM, short for Floating Junction Gate Random Access Memory, is a type of computer memory invented and subsequently patented in July 2009 by Oriental Semiconductor Electronics, Ltd.^[1][2]

According to Oriental Semiconductor researchers, FJG ram has an ultra-compact cell area of 4-5F² (F refers to feature size) and a capacitor-less cell configuration. The FJG RAM can be produced in existing standard dynamic RAM fabrication plants. Due to the absence of a capacitor, the FJG cell process is more compatible with logic processes, allowing its use in standalone DRAM applications as well as embedded-DRAM applications. Other properties include non-destructive-read and the possibility for DRAM designers to use shared sense amplifiers to reduce the complexity of peripheral circuits.^[2]

As of July 2023, there is little evidence of ongoing development or near-term commercialization efforts.

• Oriental Semiconductor webpage