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Malte Czernohorsky
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2020 – today
- 2022
- [c8]Wenke Weinreich, Maximilian Lederer
, Malte Czernohorsky:
Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2. ICICDT 2022: 84-87 - [c7]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c6]Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS 2022: 11-1 - [c5]Alison Erlene Viegas, Konstantinos Efstathios Falidas
Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies. IRPS 2022: 47-1 - 2020
- [c4]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9 - [c3]Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens:
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c2]Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS 2019: 1-4 - 2018
- [c1]Clemens Mart
CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures. ESSDERC 2018: 130-133
Coauthor Index
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