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Hiroshi Sugawara
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2020 – today
- 2023
- [c5]Mario Sako, T. Nakajima, Fumihiro Kono, T. Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Y. Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, M. Kano, Hiroshi Sugawara, A. H. Sravan, K. Hayashi, Toshiyuki Kouchi, Y. Watanabe:
A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput. VLSI Technology and Circuits 2023: 1-2 - 2021
- [c4]Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara:
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. ISSCC 2021: 428-430 - 2020
- [j3]Noboru Shibata, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, Junji Musha, Takatoshi Minamoto, Kazushige Kanda, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Masatsugu Ogawa, Yusuke Ochi, Takahiro Shimizu, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Jun Nakai, Jumpei Sato, Namasivayam Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, Hiroshi Nakamura, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Tomoaki Nakano:
A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. IEEE J. Solid State Circuits 55(1): 178-188 (2020)
2010 – 2019
- 2019
- [c3]Noboru Shibata, Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Takeshi Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, H. Takamoto, Junji Musha, Takatoshi Minamoto, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Mikio Ogawa, Yusuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Naohito Morozumi, Jumpei Sato, Namas Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, T. Kaneko, Hiroshi Nakamura:
A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. ISSCC 2019: 210-212 - 2018
- [c2]Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura:
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. ISSCC 2018: 336-338 - 2014
- [c1]Toyomi Fujita, Hiroshi Sugawara:
Development of a Parallel Link Arm for Object Handling by Wheeled Mobile Robot. ICINCO (2) 2014: 592-598
1990 – 1999
- 1996
- [j2]Masayoshi Ohkawa, Hiroshi Sugawara, Naoaki Sudo, Masaru Tsukiji, Ken-ichiro Nakagawa, Masato Kawata, Ken-ichi Oyama, Toshio Takeshima, Shuichi Ohya:
A 98 mm2 die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell. IEEE J. Solid State Circuits 31(11): 1584-1589 (1996) - 1992
- [j1]Toshiro Higuchi, Koichi Oka, Hiroshi Sugawara:
Clean room robot with non-contact joints using magnetic bearings. Adv. Robotics 7(2): 105-119 (1992)
Coauthor Index
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