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Geert Van den Bosch
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Journal Articles
- 2014
- [j4]Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt:
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54(9-10): 1697-1701 (2014) - [j3]Baojun Tang, Weidong Zhang
, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. Microelectron. Reliab. 54(9-10): 2258-2261 (2014) - 2008
- [j2]Peter Moens, Geert Van den Bosch:
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. Microelectron. Reliab. 48(8-9): 1300-1305 (2008) - 2004
- [j1]Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44(9-11): 1621-1624 (2004)
Conference and Workshop Papers
- 2024
- [c17]Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW 2024: 1-4 - [c16]S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW 2024: 1-4 - [c15]Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS 2024: 1-6 - [c14]D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen:
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. IRPS 2024: 1-5 - 2023
- [c13]Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW 2023: 1-4 - [c12]Zhuo Chen
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW 2023: 1-4 - [c11]S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Enabling 3D NAND Trench Cells for Scaled Flash Memories. IMW 2023: 1-4 - 2022
- [c10]Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. IMW 2022: 1-4 - [c9]S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Yusuke Oniki, Geert Van den Bosch, Maarten Rosmeulen:
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. IMW 2022: 1-4 - [c8]Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW 2022: 1-4 - [c7]Maarten Rosmeulen, Cesar J. Lockhart de la Rosa
Liquid Memory and the Future of Data Storage. IMW 2022: 1-4 - [c6]Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS 2022: 4 - [c5]Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS 2022: 12-1 - 2021
- [c4]K. Banerjee, Laurent Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. IMW 2021: 1-4 - [c3]Anastasiia Kruv, Sean R. C. McMitchell
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS 2021: 1-6 - [c2]Davide Tierno
Reliability of Mo as Word Line Metal in 3D NAND. IRPS 2021: 1-6 - 2019
- [c1]Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf
Impact of Mechanical Stress on the Electrical Performance of 3D NAND. IRPS 2019: 1-5
Coauthor Index
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