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Ryutaro Yasuhara

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2020 – today

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2020
[c12]
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  - conf/vlsi-dat/Yasuhara20
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Ryutaro Yasuhara:
TaOx ReRAM as a Highly-Reliable Embedded Memory and Its Application to Edge AI. VLSI-DAT 2020: 1

2010 – 2019

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2019
[c11]
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Shouhei Fukuyama, Atsuna Hayakawa, Ryutaro Yasuhara, Shinpei Matsuda, Hiroshi Kinoshita, Ken Takeuchi:
Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM. IRPS 2019: 1-6
[c10]
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Ryutaro Yasuhara, Takashi Ono, Reiji Mochida, Shunsaku Muraoka, Kazuyuki Kouno, Koji Katayama, Yuriko Hayata, Masayoshi Nakayama, Hitoshi Suwa, Yukio Hayakawa, Takumi Mikawa, Yasushi Gohou, Shinichi Yoneda:
Reliability Issues in Analog ReRAM Based Neural-Network Processor. IRPS 2019: 1-5
2018
[c9]
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Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara:
Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM. ESSDERC 2018: 46-49
[c8]
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Shouhei Fukuyama, Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara:
Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM. IRPS 2018: 4-1
[c7]
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Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi:
Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. NVMTS 2018: 1-4
2017
[c6]
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  - conf/essderc/InoseAYMT17
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Takashi Inose, Seiichi Aritome, Ryutaro Yasuhara, Satoshi Mishima, Ken Takeuchi:
Study of error repeatability and recovery in 40nm TaOx ReRAM. ESSDERC 2017: 10-13
2015
[c5]
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  - conf/irps/WeiKMYME15
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Zhiqiang Wei, Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Takumi Mikawa, Koji Eriguchi:
A new prediction method for ReRAM data retention statistics based on 3D filament structures. IRPS 2015: 5
[c4]
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Yukio Hayakawa, Atsushi Himeno, Ryutaro Yasuhara, W. Boullart, E. Vecchio, T. Vandeweyer, T. Witters, D. Crotti, M. Jurczak, S. Fujii, S. Ito, Y. Kawashima, Yuuichirou Ikeda, Akifumi Kawahara, Ken Kawai, Zhiqiang Wei, Shunsaku Muraoka, Kazuhiko Shimakawa, Takumi Mikawa, Shinichi Yoneda:
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application. VLSIC 2015: 14-
2014
[c3]
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  - conf/icicdt/KawaiKYMWATS14
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Ken Kawai, Akifumi Kawahara, Ryutaro Yasuhara, Shunsaku Muraoka, Zhiqiang Wei, Ryotaro Azuma, Kouhei Tanabe, Kazuhiko Shimakawa:
Highly-reliable TaOx reram technology using automatic forming circuit. ICICDT 2014: 1-4
[c2]
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  - conf/iscas/WeiYKMNM14
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Zhiqiang Wei, Ryutaro Yasuhara, Koji Katayama, Takumi Mikawa, Takeki Ninomiya, Shunsaku Muraoka:
Quantitative method for estimating characteristics of conductive filament in ReRAM. ISCAS 2014: 842-845
2013
[c1]
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  - conf/isscc/KawaharaKIKAYTWNKYMHYMSTMA13
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Akifumi Kawahara, Ken Kawai, Yuuichirou Ikeda, Yoshikazu Katoh, Ryotaro Azuma, Yuhei Yoshimoto, Kouhei Tanabe, Zhiqiang Wei, Takeki Ninomiya, Koji Katayama, Ryutaro Yasuhara, Shunsaku Muraoka, Atsushi Himeno, Naoki Yoshikawa, Hideaki Murase, Kazuhiko Shimakawa, Takeshi Takagi, Takumi Mikawa, Kunitoshi Aono:
Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM. ISSCC 2013: 220-221

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