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Koji Eriguchi
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2020 – today
- 2021
- [c8]Tomohiro Kuyama, Keiichiro Urabe
, Koji Eriguchi:
Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS). IRPS 2021: 1-7
2010 – 2019
- 2015
- [j3]Koji Eriguchi, Kouichi Ono:
Impacts of plasma process-induced damage on MOSFET parameter variability and reliability. Microelectron. Reliab. 55(9-10): 1464-1470 (2015) - [c7]Taro Ikeda, Akira Tanihara, Nobuhiko Yamamoto, Shigeru Kasai, Koji Eriguchi, Kouichi Ono:
Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout. ICICDT 2015: 1-4 - [c6]Yukimasa Okada, Koji Eriguchi, Kouichi Ono:
Surface orientation dependence of ion bombardment damage during plasma processing. ICICDT 2015: 1-5 - [c5]Zhiqiang Wei, Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Takumi Mikawa, Koji Eriguchi:
A new prediction method for ReRAM data retention statistics based on 3D filament structures. IRPS 2015: 5 - 2014
- [c4]Koji Eriguchi, Yoshinori Takao
A new aspect of plasma-induced physical damage in three-dimensional scaled structures - Sidewall damage by stochastic straggling and sputtering. ICICDT 2014: 1-5 - [c3]Masayuki Kamei, Yoshinori Takao
Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs. ICICDT 2014: 1-4 - 2013
- [c2]Asahiko Matsuda
Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency. ICICDT 2013: 191-194 - 2012
- [c1]Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda
Optimization problems for plasma-induced damage - A concept for plasma-induced damage design. ICICDT 2012: 1-4
2000 – 2009
- 2001
- [j2]Koji Eriguchi, Yoshinao Harada, Masaaki Niwa:
Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics. Microelectron. Reliab. 41(4): 587-595 (2001) - [j1]Takayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii, Koji Eriguchi:
Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics. Microelectron. Reliab. 41(5): 697-704 (2001)
Coauthor Index
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