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Konrad Seidel
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2020 – today
- 2024
- [j2]Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De
:
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. Adv. Intell. Syst. 6(4) (2024) - [c22]S. Pande, Masud Rana SK, Yannick Raffel, Maximilian Lederer, Konrad Seidel, A. Chakravorty, Sourav De, Bhaswar Chakrabarti:
FeFET based LIF Neuron with Learnable Threshold and Time Constant. DRC 2024: 1-2 - [c21]Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel:
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW 2024: 1-4 - [c20]Yusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono, Peter Reinig, Maximilian Lederer, Konrad Seidel, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Taku Umebayashi, Kentaro Akiyama:
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j1]Vivek Parmar
Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator. Adv. Intell. Syst. 5(6) (2023) - [c19]David Lehninger, Ayse Sünbül, Ricardo Olivo, Thomas Kämpfe
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress. IMW 2023: 1-4 - [c18]Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. IMW 2023: 1-4 - [c17]Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW 2023: 1-4 - 2022
- [c16]Yannick Raffel, Sunanda Thunder, Maximilian Lederer
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. ICICDT 2022: 8-11 - [c15]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c14]David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW 2022: 1-4 - [c13]Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, Johannes Heitmann:
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. IMW 2022: 1-4 - [c12]Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS 2022: 11-1 - [c11]Sourav De, Maximilian Lederer, Yannick Raffel, Franz Müller, Konrad Seidel, Thomas Kämpfe
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications. ISOCC 2022: 167-168 - [c10]Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits 2022: 355-356 - 2021
- [c9]Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Hideki Maemura, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. IMW 2021: 1-3 - [c8]Luca Pirro, Aarthi Jayakumar, Olaf Zimmerhackl, Dieter Lipp, Ralf Illgen, Armin Muehlhoff, Ronny Pfuetzner, Alban Zaka, Michael Otto, Jan Hoentschel, Yannick Raffel, Konrad Seidel, Ricardo Olivo:
Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices. IRPS 2021: 1-4 - 2020
- [c7]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9
2010 – 2019
- 2019
- [c6]Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS 2019: 1-4 - 2016
- [c5]Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Maximilian Drescher, A. Gummenscheimer, Mark G. Nolan, L. Cheng, D. H. Triyoso
La-doped ZrO2 based BEoL decoupling capacitors. ICICDT 2016: 1-4 - 2014
- [c4]D. H. Triyoso
ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM. ICICDT 2014: 1-4 - [c3]Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Stefan Riedel, Lutz Wilde, Dina H. Triyoso
ALD ZrO2 processes for BEoL device applications. ICICDT 2014: 1-4 - 2013
- [c2]Wenke Weinreich, Matthias Rudolph, Johannes Koch, Jan Paul, Konrad Seidel, Stefan Riedel, Jonas Sundqvist
High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures. ICICDT 2013: 227-230
2000 – 2009
- 2004
- [c1]Katja Schwieger, Frank Schäfer, Konrad Seidel, Gerhard P. Fettweis:
SPIDER-NET: a sensor platform for an intelligent ad-hoc wireless relaying network. Mobility Management & Wireless Access Protocols 2004: 125-126
Coauthor Index
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