default search action
Philippe Galy
Person information
Refine list
refinements active!
zoomed in on ?? of ?? records
view refined list in
export refined list as
2020 – today
- 2024
- [c20]Giovani Britton, Salvador Mir, Estelle Lauga-Larroze, Benjamin Dormieu, Joseph Lugo, Joao Azevedo, Sebastien Sadlo, Quentin Berlingard, Mikaël Cassé, Philippe Galy:
LUT-Based Design of a Cryogenic Cascode LNA with Simultaneous Noise and Power Matching. NewCAS 2024: 65-69 - 2023
- [c19]Giovani Britton, Salvador Mir, Estelle Lauga-Larroze, Benjamin Dormieu, Quentin Berlingard, Mikaël Cassé, Philippe Galy:
Noise modeling using look-up tables and DC measurements for cryogenic applications. VLSI-SoC 2023: 1-6 - [i1]Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy:
A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. CoRR abs/2305.16187 (2023) - 2022
- [c18]Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier:
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS 2022: 7 - 2020
- [c17]Mohammed Tmimi, Stefano D'Amico, Jean-Marc Duchamp, Philippe Ferrari, Philippe Galy:
7-mm low-latency inter-chiplet serial link with silicon interposer. MWSCAS 2020: 683-686
2010 – 2019
- 2019
- [j17]Carlos Marquez
, Carlos Navarro
On the Low-Frequency Noise Characterization of Z2-FET Devices. IEEE Access 7: 42551-42556 (2019) - [c16]Carlos Marquez
Temperature and Gate Leakage Influence on the Z2-FET Memory Operation. ESSDERC 2019: 238-241 - [c15]Philippe Galy, R. Lethiecq, Maryline Bawedin:
1T1C Ultra low power relative Thermal-Voltage sensor in 28nm UTBB FD-SOI CMOS technology for standard, spatial and quantum applications. ICICDT 2019: 1-4 - [c14]R. Lethiecq, Maryline Bawedin, Philippe Galy:
Compact MOS Structure & Design for Ion-Ioff Thermal control in 28nm UTBB FD-SOI CMOS technology. ICICDT 2019: 1-4 - [c13]Mohammed Tmimi, Stefano D'Amico, Jean-Marc Duchamp
10Gbps Length adaptive on-chip RF serial link for Network on Chips and Multiprocessor chips applications. ICICDT 2019: 1-4 - [c12]Louise De Conti, Sorin Cristoloveanu, Maud Vinet, Philippe Galy:
Thin-Film FD-SOI BIMOS Topologies for ESD Protection. IRPS 2019: 1-5 - 2018
- [j16]Jorge Loayza, Nicolas Guitard, Bruno Allard, Luong-Viêt Phung
Simulation, characterization and implementation of a new SCR-based device with a turn-off capability for EOS-immune ESD power supply clamps in advanced CMOS technology nodes. Microelectron. Reliab. 85: 176-189 (2018) - [c11]Philippe Galy, R. Lethiecq, Maryline Bawedin:
Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology. ICICDT 2018: 157-160 - 2017
- [j15]Philippe Galy, Wim Schoenmaker
Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology. Microelectron. Reliab. 76-77: 680-684 (2017) - [c10]Louise De Conti, Thomas Bedecarrats, Maud Vinet, Sorin Cristoloveanu, Philippe Galy:
Toward Gated-Diode-BIMOS for thin silicon ESD protection in advanced FD-SOI CMOS technologies. ICICDT 2017: 1-4 - 2016
- [j14]Benjamin Viale, Mathieu Fer, Lionel Courau, Philippe Galy, Bruno Allard:
On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology. Microelectron. Reliab. 64: 101-108 (2016) - [c9]Philippe Galy, S. Athanasiou
Preliminary results on TFET - Gated diode in thin silicon film for IO design & ESD protection in 28nm UTBB FD-SOI CMOS technology. ICICDT 2016: 1-4 - 2015
- [j13]Philippe Galy, Wim Schoenmaker:
Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes. Microelectron. Reliab. 55(9-10): 1532-1536 (2015) - [c8]S. Athanasiou
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology. ICICDT 2015: 1-4 - [c7]Wim Schoenmaker, Philippe Galy:
Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices. ICICDT 2015: 1-4 - 2014
- [j12]Wim Schoenmaker
Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 33(6): 893-902 (2014) - [c6]Philippe Galy, J. Bourgeat, D. Marin-Cudraz:
New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology. ICICDT 2014: 1-4 - 2013
- [j11]Philippe Galy, T. Lim, J. Bourgeat, Jean Jimenez, Boris Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier:
Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application. Microelectron. Reliab. 53(9-11): 1284-1287 (2013) - [c5]Vivek Asthana, Malathi Kar, Jean Jimenez, Jean-Philippe Noel, Sébastien Haendler, Philippe Galy:
Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control. ESSCIRC 2013: 415-418 - [c4]Vivek Asthana, Malathi Kar, Jean Jimenez, Sébastien Haendler, Philippe Galy:
6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology. ICICDT 2013: 89-92 - [c3]Philippe Galy, T. Lim, Jean Jimenez, Boris Heitz, Ph. Benech, J. M. Fournier, D. Marin-Cudraz:
ESD protection using BIMOS transistor in 100 GHz RF application for advanced CMOS technology. ICICDT 2013: 199-202 - 2012
- [j10]Philippe Galy, Johan Bourgeat, Jean Jimenez, Nicolas Guitard, Alexandre Dray, Ghislain Troussier, Blaise Jacquier, David Marin-Cudraz:
Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology. Microelectron. Reliab. 52(9-10): 1998-2004 (2012) - [c2]Philippe Galy, Jean Jimenez, Johan Bourgeat, A. Dray, Ghislain Troussier, Boris Heitz, Nicolas Guitard, David Marin-Cudraz, H. Beckrich-Ros:
BIMOS transistor and its applications in ESD protection in advanced CMOS technology. ICICDT 2012: 1-4 - [c1]Jean Jimenez, Philippe Galy, Johan Bourgeat, Boris Heitz:
High swing low capacitance ESD RF protections in advanced CMOS technologies. ICICDT 2012: 1-4 - 2011
- [j9]Philippe Galy, J. Bourgeat, Jean Jimenez, Blaise Jacquier, D. Marin-Cudraz, Sylvain Dudit:
Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies. Microelectron. Reliab. 51(9-11): 1608-1613 (2011) - [j8]J. Bourgeat, Philippe Galy, A. Dray, Jean Jimenez, D. Marin-Cudraz, Blaise Jacquier:
A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. Microelectron. Reliab. 51(9-11): 1614-1617 (2011) - 2010
- [j7]J. Bourgeat, Christophe Entringer, Philippe Galy, Marise Bafleur, D. Marin-Cudraz:
Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm. Microelectron. Reliab. 50(9-11): 1379-1382 (2010) - [j6]Philippe Galy, Sylvain Dudit, Michel Vallet, Ph. Larre, M. Bilinski, E. Petit, J. Beltritti, A. Dray, Jean Jimenez, Frank Jezequel, R. Chevallier, C. Boutonnat, V. Varo:
Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS-BICMOS technologies. Microelectron. Reliab. 50(9-11): 1388-1392 (2010)
2000 – 2009
- 2009
- [j5]Philippe Galy, Sylvain Dudit, Michel Vallet, Corinne Richier, Christophe Entringer, Frank Jezequel, E. Petit, J. Beltritti:
Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress. Microelectron. Reliab. 49(9-11): 1107-1110 (2009) - 2006
- [j4]Christophe Entringer, Philippe Flatresse, Philippe Galy, Florence Azaïs, Pascal Nouet
Electro-thermal short pulsed simulation for SOI technology. Microelectron. Reliab. 46(9-11): 1482-1485 (2006) - 2004
- [j3]Philippe Galy, V. Berland, A. Guilhaume, F. Blanc, J. P. Chante:
Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD. Microelectron. Reliab. 44(9-11): 1775-1780 (2004) - 2002
- [j2]Philippe Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy, F. Blanc:
Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse. Microelectron. Reliab. 42(9-11): 1299-1302 (2002) - 2001
- [j1]A. Guilhaume, Philippe Galy, J. P. Chante, B. Foucher, F. Blanc:
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges. Microelectron. Reliab. 41(9-10): 1433-1437 (2001)
Coauthor Index
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
Unpaywalled article links
Add open access links from to the list of external document links (if available).
Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.
Archived links via Wayback Machine
For web page which are no longer available, try to retrieve content from the of the Internet Archive (if available).
Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.
Reference lists
Add a list of references from ,
, and
to record detail pages.
load references from crossref.org and opencitations.net
Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.
Citation data
Add a list of citing articles from and
to record detail pages.
load citations from opencitations.net
Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.
OpenAlex data
Load additional information about publications from .
Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.
last updated on 2024-10-07 01:28 CEST by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint
dblp was originally created in 1993 at:
since 2018, dblp has been operated and maintained by:
the dblp computer science bibliography is funded and supported by: