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"A 16-kb 9T Ultralow-Voltage SRAM With Column-Based Split Cell-VSS, ..."

M. Sultan M. Siddiqui, Zhao Chuan Lee, Tony Tae-Hyoung Kim (2021)

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DOI: 10.1109/TVLSI.2021.3102675

access: closed

type: Journal Article

metadata version: 2022-03-16

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  - https://dblp.org/rec/journals/tvlsi/SiddiquiLK21
M. Sultan M. Siddiqui, Zhao Chuan Lee, Tony Tae-Hyoung Kim:
A 16-kb 9T Ultralow-Voltage SRAM With Column-Based Split Cell-VSS, Data-Aware Write-Assist, and Enhanced Read Sensing Margin in 28-nm FDSOI. IEEE Trans. Very Large Scale Integr. Syst. 29(10): 1707-1719 (2021)

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