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"High quality gate insulator film formation on SiC using by ..."

Koutarou Tanaka et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.076

access: closed

type: Journal Article

metadata version: 2020-10-26

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Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma. Microelectron. Reliab. 47(4-5): 786-789 (2007)

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