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"Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown ..."

Stephan Abermann et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.002

access: closed

type: Journal Article

metadata version: 2024-06-17

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Stephan Abermann, J. K. Efavi, G. Sjöblom, Max Christian Lemme, Jörgen Olsson, Emmerich Bertagnolli:
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO₂ and ZrO₂ high-kappa dielectrics. Microelectron. Reliab. 47(4-5): 536-539 (2007)

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