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"A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 ..."

Changhyuk Lee et al. (2011)

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DOI: 10.1109/JSSC.2010.2084450

access: closed

type: Journal Article

metadata version: 2020-08-30

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  - journals/jssc/LeeLALPCJYCYJJKKJNHSCKCJPYK11
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  - https://dblp.org/rec/journals/jssc/LeeLALPCJYCYJJKKJNHSCKCJPYK11
Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Heejoung Park, Joong-Seob Yang, Yo-Hwan Koh:
A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS. IEEE J. Solid State Circuits 46(1): 97-106 (2011)

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