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"Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in ..."

Kazuhiro Mochizuki et al. (2006)

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DOI: 10.1093/IETELE/E89-C.7.943

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/MochizukiTSTU06
Kazuhiro Mochizuki, Ken-ichi Tanaka, Takashi Shiota, Takafumi Taniguchi, Hiroyuki Uchiyama:
Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation. IEICE Trans. Electron. 89-C(7): 943-948 (2006)

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