G = 40 nm AlN-GDC-HEMT on SiC Wafer With f_T/I_DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers.">G = 40 nm AlN-GDC-HEMT on SiC Wafer With f_T/I_DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers., dblp, computer science, bibliography, knowledge graph, author, editor, publication, conference, journal, book, thesis, database, collection, open data, bibtex">

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"A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With ..."

B. Mounika et al. (2024)

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DOI: 10.1109/ACCESS.2024.3455559

access: open

type: Journal Article

metadata version: 2024-10-03

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B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal:
A Novel L_G = 40 nm AlN-GDC-HEMT on SiC Wafer With f_T/I_DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers. IEEE Access 12: 131906-131914 (2024)

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