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D. Nirmal
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2020 – today
- 2024
- [j14]B. Mounika
, Asisa Kumar Panigrahy
A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers. IEEE Access 12: 131906-131914 (2024) - [j13]Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. Microelectron. J. 147: 106158 (2024) - [c2]Deepti Mongia, Subhash Chander, D. Nirmal:
Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device. ICDCS 2024: 221-223 - [c1]S. Angen Franklin, Binola K. Jebalin, Subhash Chander, D. Nirmal:
Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs. ICDCS 2024: 258-261 - 2023
- [j12]Adrija Mukherjee, Papiya Debnath, D. Nirmal, Manash Chanda:
A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications. Microelectron. J. 133: 105689 (2023) - [j11]Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon
Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. Microelectron. J. 138: 105866 (2023) - [j10]B. Mounika, J. Ajayan
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. Microelectron. J. 140: 105923 (2023) - [j9]J. S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan, Angelin Delighta A
A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications. Microelectron. J. 140: 105951 (2023) - 2022
- [j8]D. Gracia, D. Nirmal, D. Jackuline Moni:
Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET. Microelectron. J. 119: 105323 (2022) - [j7]J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith:
Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review. Microelectron. J. 130: 105634 (2022) - 2021
- [j6]J. Ajayan
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectron. J. 114: 105141 (2021) - [j5]D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh:
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. Microelectron. J. 118: 105293 (2021)
2010 – 2019
- 2019
- [j4]J. Ajayan, D. Nirmal, P. Mohankumar
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review. Microelectron. J. 92 (2019) - 2015
- [j3]Binola K. Jebalin, A. Shobha Rekh
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectron. J. 46(12): 1387-1391 (2015) - 2013
- [j2]D. Nirmal, P. Vijayakumar, K. Shruti, N. Mohankumar:
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric. Int. J. Circuit Theory Appl. 41(6): 608-618 (2013) - [j1]D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar:
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. Microelectron. Reliab. 53(3): 499-504 (2013)
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