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"1.1 kV vertical p-i-n GaN-on-sapphire diodes."

Sara E. Harrison et al. (2018)

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DOI: 10.1109/DRC.2018.8442240

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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  dblp key:
  - conf/drc/HarrisonSFVN18
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Sara E. Harrison, Qinghui Shao, Clint D. Frye, Lars F. Voss, Rebecca J. Nikolic:
1.1 kV vertical p-i-n GaN-on-sapphire diodes. DRC 2018: 1-2

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