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"State-Independent Low Resistance Drift SiSbTe Phase Change Memory for ..."

H. Y. Cheng et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631376

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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H. Y. Cheng, Z. L. Liu, A. Majumdar, Alexander Grun, A. Ray, J. Su, Malte J. Rasch, Fabio Carta, Lynne M. Gignac, C. Lavoie, C. W. Cheng, M. Bright Sky, H. L. Lung:
State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications. VLSI Technology and Circuits 2024: 1-2

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