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Ryusuke Nebashi
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2020 – today
- 2022
- [j9]Xu Bai, Ryusuke Nebashi, Makoto Miyamura, Kazunori Funahashi, Naoki Banno, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada
:
28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation. IEICE Trans. Electron. 105-C(10): 627-630 (2022) - [j8]Xu Bai
Via-Switch FPGA: 65-nm CMOS Implementation and Evaluation. IEEE J. Solid State Circuits 57(7): 2250-2262 (2022) - 2020
- [c10]Ryusuke Nebashi, Naoki Banno, Makoto Miyamura, Xu Bai, Kazunori Funahashi, Koichiro Okamoto, Noriyuki Iguchi, Hideaki Numata, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada
A 171k-LUT Nonvolatile FPGA using Cu Atom-Switch Technology in 28nm CMOS. FPL 2020: 323-327 - [c9]Koichiro Okamoto, Ryusuke Nebashi, Naoki Banno, Xu Bai, Hideaki Numata, Noriyuki Iguchi, Makoto Miyamura, Hiromitsu Hada, Kazunori Funahashi, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada
ON-state retention of Atom Switch eNVM for IoT/AI Inference Solution. IRPS 2020: 1-4
2010 – 2019
- 2017
- [j7]Makoto Miyamura, Toshitsugu Sakamoto, Xu Bai, Yukihide Tsuji
NanoBridge-Based FPGA in High-Temperature Environments. IEEE Micro 37(5): 32-42 (2017) - 2016
- [j6]Naoya Onizawa, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Takahiro Hanyu:
Evaluation of Soft-Delay-Error Effects in Content-Addressable Memory. J. Multiple Valued Log. Soft Comput. 26(1-2): 125-140 (2016) - [c8]Yukihide Tsuji
A 2× logic density Programmable Logic array using atom switch fully implemented with logic transistors at 40nm-node and beyond. VLSI Circuits 2016: 1-2 - 2015
- [j5]Masanori Natsui
Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction. IEEE J. Solid State Circuits 50(2): 476-489 (2015) - 2014
- [j4]Shoun Matsunaga, Akira Mochizuki, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme. IEICE Electron. Express 11(10): 20140297 (2014) - [c7]Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing. ISCAS 2014: 1588-1591 - [c6]Naoya Onizawa, Shoun Matsunaga, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Takahiro Hanyu:
Soft-Delay-Error Evaluation in Content-Addressable Memory. ISMVL 2014: 220-225 - [c5]Noboru Sakimura, Yukihide Tsuji
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications. ISSCC 2014: 184-185 - 2013
- [c4]Masanori Natsui
Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating. ISSCC 2013: 194-195 - 2012
- [c3]Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji
High-speed simulator including accurate MTJ models for spintronics integrated circuit design. ISCAS 2012: 1971-1974
2000 – 2009
- 2009
- [j3]Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, Naoki Kasai:
Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros. IEICE Trans. Electron. 92-C(4): 417-422 (2009) - [j2]Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Naoki Kasai:
Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs. IEEE J. Solid State Circuits 44(8): 2244-2250 (2009) - [c2]Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito, Yuichi Ito, Sadahiko Miura, Yuko Kato, Kaoru Mori, Yasuaki Ozaki, Yosuke Kobayashi, Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Katsumi Suemitsu, Shunsuke Fukami
A 90nm 12ns 32Mb 2T1MTJ MRAM. ISSCC 2009: 462-463 - 2008
- [c1]Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Naoki Kasai:
Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs. CICC 2008: 355-358 - 2007
- [j1]Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken-ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo
A 16-Mb Toggle MRAM With Burst Modes. IEEE J. Solid State Circuits 42(11): 2378-2385 (2007)
Coauthor Index
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