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Microelectronics Journal, Volume 114
Volume 114, August 2021
- Gaurav Saini
, Maryam Shojaei Baghini:
An energy harvesting system for time-varying energy transducers with FOCV based dynamic and adaptive MPPT for 30 nW to 4 mW of input power range. 105080
- Manvi Sharma, Mayank Kumar Rai, Rajesh Khanna
Dielectric surface roughness scattering induced crosstalk performance of coupled MCB interconnects. 105084
- Tianyu Yang, Xiaoshi Li
An embedded capacitive sensor for in-situ angular detection of micromotor. 105088 - Shilei Zhao, Hai Huang, Zhiwei Liu, Bin Yu, Bo Yu:
An efficient signed digit montgomery modular multiplication algorithm. 105099 - M. Saravanan
A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications. 105102 - Zhangming Zhu:
MEJ scope 2021. 105107
- Shun Shen Peter Wang, Yin-Tien Wang, Choung-Lii Chao, Wei-Bin Yang:
Instrumentation of Twin-MCMs based mutual-test. 105108
- Weixing Huang, Huilong Zhu, Yongkui Zhang
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. 105110 - Zhengfeng Huang, Di Cao
Design of node separated triple-node-upset self-recoverable latch. 105111 - Qiuzhen Wan
High gain and low noise wideband folded-switching mixer employing transformer and complimentary CS/CG hybrid topology. 105112 - Haowei Lu
A digital background calibration scheme for non-linearity of SAR ADC using back-propagation algorithm. 105113 - Dengquan Li, Maliang Liu, Shubin Liu, Yuhua Liang, Ruixue Ding:
A statistical offset calibration technique for 1.5-bit/cycle SAR ADCs. 105114 - Marius Neag, István Kovács, Raul Onet, Iulian Câmpanu:
Design options for high-speed OA-based fully differential buffers able to drive large loads. 105115 - Mahmood Uddin Mohammed
FinFET based SRAMs in Sub-10nm domain. 105116 - Abdolreza Darabi
Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia applications. 105117 - Myongchol Kang, Chan Ri, Jonghuan Choe:
Capacitance response of concave well substrate touch-mode capacitive pressure sensor: Mathematical analysis and simulation. 105118 - Han Wu
Design and implementation of true random number generators based on semiconductor superlattice chaos. 105119 - Zheng Qiu
A 1 GS/s 10bit SAR ADC with background calibration in 28 nm CMOS. 105120 - Evgenii Khokhryakov:
Stability of single-stage single-bit ∑Δ modulator. 105121 - Aditya S. Kumar, Sagar Jain, Neeta Pandey
Clock Aligned Input Adiabatic Logic. 105122 - Elmira Semsar Parapari, Ziaddin Daei Koozehkanani, Siroos Toofan:
A 10-GHz Inductorless Modified Regulated Cascode Transimpedance Amplifier for Optical Fiber Communication. 105123 - Vandana Devi Wangkheirakpam
Noise behavior of vertical tunnel FETs under the influence of interface trap states. 105124 - Tulika Chawla
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor. 105125 - Kapil Bhardwaj, Mayank Srivastava:
New electronically adjustable memelement emulator for realizing the behaviour of fully-floating meminductor and memristor. 105126 - Chua-Chin Wang
0.7 % error rate 3A bidirectional current sensor using high voltage CMOS process. 105127 - Hamed Mosalam
A 57-100 GHz 0.13 μm SiGe power amplifier with high output power and efficiency. 105128 - Ali Nejati
A bulk-driven differential CMOS schmitt trigger with adjustable hysteresis for ultra-low-voltage operation. 105129 - Joseph Chong
A 0.13-μm CMOS resonator-based frequency-doubling mechanism for clock recovery in a full-rate 40 Gb/s optical receiver. 105137 - Xiao Xiang
Equal-slope baud-rate CDR algorithm with optimized eye opening. 105138 - Muhammad Naqib Nashrudin
No-flow underfill: Effect of chip placement speed on the void formation using numerical method. 105139 - Xiaodong Bi
A novel holes filling method based on layered depth map and patch sparsity for complex-scene images. 105140 - J. Ajayan
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. 105141 - Kai Jing
Design of 0-15 GHz flat-bandwidth programmable gain amplifier based on transconductance switching technique. 105142 - Yew-Chiong Lo
Design of wideband phase shifter with edge-coupled semi-elliptical lines. 105143 - Xin Cheng
A reconfigurable and compact hardware architecture of CLEFIA block cipher with multi-configuration. 105144 - N. Taherkhani
A congestion-aware routing algorithm for mesh-based platform networks-on-chip. 105145 - Aakanksha Lakhanpal, Karmjit Singh Sandha:
Impact of thermally -aware environmental conditions on double gate carbon nanotube FET. 105146 - Mohamed Safwat
91.6% efficient hybrid DC-DC buck converter with wide programmable conversion range. 105147 - Junwei Sun
Memristive circuits design under different personality traits based on second-order damping system. 105148 - Lifeng Tang
Design and investigation of a high integrated reliable ceramic package for surface mount technology. 105149
- Mingyang Gong, Haichun Zhang, Chao Wang, Qiaoling Tong, Zhenglin Liu:
Corrigendum to "Design and implementation of robust and low-cost SRAM PUF using PMOS and linear shift register extractor" [Microelectron. J. 103C (2020) 104844]. 105150
- Jia-Hong Chang, Shao-Yun Fang
Placement-guided pin layout substitution for routability optimization. 105151 - Daniel Junehee Lee
All-digital successive approximation TDC in time-mode signal processing. 105152 - Z. Zaaboub, F. Hassen, L. Chaabane, H. Maaref:
Photoluminescence and time resolved photoluminescence properties in as grown ZnO thin films prepared by DC reactive sputtering for optoelectronic devices. 105153 - Farshid Sanei, Hamed Farbeh
A link adaptation scheme for reliable downlink communications in narrowband IoT. 105154 - Joseph Chong
Input-resistance reduced gm-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication. 105155 - H. Lad Kirankumar
Low mismatch high-speed charge pump for high bandwidth phase locked loops. 105156 - Hongwei Shen
An ultralow-power CMOS bandgap voltage reference with N+ doped PMOS. 105157
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