We report temperature-dependent time-integrated and time-resolved photoluminescence (PL)
studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical …

We demonstrate the realization of the high-brightness and high-efficiency light emitting
diodes (LEDs) using dislocation-free indium gallium nitride (InGaN)/gallium nitride (GaN) …

Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by
chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle)…

Graphene quantum dot (GQD) light‐emitting diodes (GQD‐LEDs) are shown to have an
electroluminescence exceeding 1000 cd m‐2. These devices are possible due to a novel …

There has been an escalation in interest in developing methods to control the near field
because of its role in subwavelength optics. Many novel ideas have emerged in the field of …

As interests in air quality monitoring related to environmental pollution and industrial safety
increase, demands for gas sensors are rapidly increasing. Among various gas sensor types, …

We demonstrate the surface plasmon (SP) enhanced green light-emitting diodes (LEDs).
The Au nanoparticles were embedded in the p-GaN of LEDs. The photoluminescence and …

Formation of the soluble N-ethylmaleimide-sensitive factor attachment protein receptor (SNARE)
complex provides mechanical thrust for membrane fusion, but its molecular mechanism …

Single-crystalline GaN nanorods are formed on a sapphire substrate by hydride vapor phase
epitaxy (HVPE). Their structural and optical properties are investigated by x-ray diffraction, …

Light-matter interaction gives optical microscopes tremendous versatility compared with
other imaging methods such as electron microscopes, scanning probe microscopes, or x-ray …