Optimizing the decomposition of time series using evolutionary algorithms: soil moisture analytics
…, C Kulkarni, K Schmidt, P Shastry, R Rapeta - Proceedings of the …, 2017 - dl.acm.org
Soil moisture plays a crucial part in earth science, with impact on agriculture, ecology, hydrology,
landslides, and water resources. Extremes in soil moisture, which we denote as peaks …
landslides, and water resources. Extremes in soil moisture, which we denote as peaks …
Effects of thermal stress on low-temperature-grown GaAs and Al0. 3Ga0. 7As MISFET parameters
RV Rao, TC Chong, LS Tan, WS Lau - 1999 - scholarbank.nus.edu.sg
GaAs and Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy
(MBE) were used as insulators in the fabrication of MISFET devices. Long term degradation …
(MBE) were used as insulators in the fabrication of MISFET devices. Long term degradation …
A quasianalytical model for LT–GaAs and LT–Al0.3Ga0.7As MISFET devices
RV Rao, TC Chong, LS Tan, WS Lau… - Microwave and Optical …, 2000 - Wiley Online Library
This paper describes a quasianalytical model for the calculation of the current–voltage
characteristics of LT–GaAs and LT–Al 0.3 Ga 0.7 As MISFET devices. The model is derived from …
characteristics of LT–GaAs and LT–Al 0.3 Ga 0.7 As MISFET devices. The model is derived from …
STUDY OF LT-GAAS AND LT-AL0. 3GA0. 7AS MISFET DEVICES
RVVVJ RAO - 2000 - scholarbank.nus.edu.sg
GaAs and Al0.3Ga0.7As, grown by Molecular Beam Epitaxy (MBE) at 200C-300C and
subsequently annealed at 600C, have proved valuable in both electronic and optoelectronic …
subsequently annealed at 600C, have proved valuable in both electronic and optoelectronic …
Low-temperature grown GaAs and Al0. 3Ga0. 7As MISFETs-characterization and model development
RV Rao, TC Chong, LS Tan, WS Lau, JJ Liou - 1999 - scholarbank.nus.edu.sg
GaAs and Al0.3Ga0.7As, grown at 280C by molecular beam epitaxy (MBE) and in situ
annealed at 600C for 10 minutes, had been employed as gate insulators in GaAs based field …
annealed at 600C for 10 minutes, had been employed as gate insulators in GaAs based field …
Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes
RV Rao, TC Chong, LS Tan, WS Lau… - International journal of …, 1999 - Taylor & Francis
Low temperature (LT)-grown GaAs and Al 0.3 Ga 0.7 As metal-insulator-n + -GaAs (MIN)
diodes have been fabricated and their electrical properties analyzed. Studies were carried out …
diodes have been fabricated and their electrical properties analyzed. Studies were carried out …
[PDF][PDF] A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction δ-doped PHEMTs-Modeling and Measurements
RV Rao, J Joe, YWM Chia, KS Ang, H Wang, GI Ng - 2000 - researchgate.net
A simple and accurate method for extracting smallsignal signal equivalent circuit for double
heterojunction δdoped PHEMTs was developed. The circuit elements were extracted from …
heterojunction δdoped PHEMTs was developed. The circuit elements were extracted from …
Change of gm (f) in LT-GaAs and LT-Al0. 3Ga0. 7As MISFETs with thermal stress
RV Rao, TC Chong, LS Tan, WS Lau, A Alphones - 1999 - amsacta.unibo.it
GaAs and Al0.3Ga0.7As layers grown by MBE at low temperatures (LT) and subsequently
annealed at normal growth temperature (600C) were used as insulators in the gate structure …
annealed at normal growth temperature (600C) were used as insulators in the gate structure …
Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0. 3Ga0. 7As MISFETs
RV Rao, TC Chongt, LS Tan, WS Lau - 1999 - scholarbank.nus.edu.sg
GaAs MISFETs with low temperature (LT) grown gate insulator layers have been fabricated
and their electrical properties analyzed. The transconductance frequency dispersion …
and their electrical properties analyzed. The transconductance frequency dispersion …
[PDF][PDF] " Electrical Engineering Dept, University of central Fiorida, olando, Florida, usA
RV Rao, TC Chong, LS Tan, WS Lau, JJ Liou - core.ac.uk
A theoretical model is developed for LT-GaAs and LT-AlGaAs MISFETs and is compared with
experimental data. This model is based upon the analytical solution of Poisson's equation, …
experimental data. This model is based upon the analytical solution of Poisson's equation, …