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"A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of ..."

Tengyue Yi, Yi Liu, Yintang Yang (2017)

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DOI: 10.1007/S10836-017-5694-5

access: closed

type: Journal Article

metadata version: 2022-08-20

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  - https://dblp.org/rec/journals/et/YiLY17
Tengyue Yi, Yi Liu, Yintang Yang:
A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient. J. Electron. Test. 33(6): 769-773 (2017)

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