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"Realization of Self-Rectifying and Self-Powered Resistive Random-Access ..."

In-Su Kim et al. (2024)

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DOI: 10.1002/AISY.202300634

access: open

type: Journal Article

metadata version: 2024-05-04

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In-Su Kim, Bumjoo Kim, Seok-June Chae, Sahn Nahm:
Realization of Self-Rectifying and Self-Powered Resistive Random-Access Memory Memristor Using [001]-Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures. Adv. Intell. Syst. 6(3) (2024)

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