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Hooman Farkhani
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2020 – today
- 2024
- [c16]Pegah Shafaghi, Yasser Rezaeiyan, Sonal Shreya, Farshad Moradi, Hooman Farkhani:
Novel Circuit for In-Memory Computing within STT-RAM Memory Blocks. NorCAS 2024: 1-6 - 2023
- [j8]Pegah Shafaghi, Mehdi Dolatshahi
, Hooman Farkhani
Energy-Efficient Spintronic-Based Neuromorphic Computing System Using Current Mode Track and Termination Circuit. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(9): 2915-2923 (2023) - [c15]Ren Li
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering. ISCAS 2023: 1-5 - [c14]Yasser Rezaeiyan
Spin-Torque Based Radio-Frequency Signal Classification Front-End. ISCAS 2023: 1-5 - [c13]Yasser Rezaeiyan
A low-noise high-linear wide dynamic-range MTJ-based magnetic field sensor. NorCAS 2023: 1-4 - [i3]Hamdam Ghanatian, Luana Benetti, Pedro Anacleto, Tim Böhnert
Spin-Orbit Torque Flash Analog-to-Digital Converter. CoRR abs/2301.03232 (2023) - 2022
- [c12]Hamdam Ghanatian
A Hybrid Spin-CMOS Flash ADC based on Spin Hall Effect and Spin Transfer Torque. ICCD 2022: 701-704 - [i2]Hoda Fares
In the realm of hybrid Brain: Human Brain and AI. CoRR abs/2210.01461 (2022) - 2021
- [c11]Hai Au Huynh, Milad Zamani
A 53GΩ@DC Input Impedance Multi-Channel Neural Recording Amplifier with 0.77 μVrms Input-Referred Noise for Deep Brain Implants. CICC 2021: 1-2 - [c10]Milad Zamani
Flexible Energy-Efficient Implementation of Adaptive Spiking Encoder for Neuromorphic Processors. ISCAS 2021: 1-5 - 2020
- [c9]Margherita Ronchini, Milad Zamani
Tunable Voltage-Mode Subthreshold CMOS Neuron. ISVLSI 2020: 252-257
2010 – 2019
- 2019
- [j7]Hooman Farkhani
LAS-NCS: A Laser-Assisted Spintronic Neuromorphic Computing System. IEEE Trans. Circuits Syst. II Express Briefs 66-II(5): 838-842 (2019) - [c8]Hooman Farkhani, Tim Böhnert
Spin-Torque-Nano-Oscillator based neuromorphic computing assisted by laser. DTIS 2019: 1-5 - [c7]Hai Au Huynh, Margherita Ronchini, Amin Rashidi
A Low-Noise High Input Impedance Analog Front-End Design for Neural Recording Implant. ICECS 2019: 887-890 - [i1]Farshad Moradi, Hooman Farkhani, Behzad Zeinali, Hamdam Ghanatian, Johan Michel Alain Pelloux-Prayer, Tim Böhnert, Mohammad Zahedinejad, Hadi Heidari, Vahid Nabaei, Ricardo Ferreira, Johan Åkerman, Jens Kargaard Madsen:
Spin-Orbit-Torque-based Devices, Circuits and Architectures. CoRR abs/1912.01347 (2019) - 2018
- [j6]Hooman Farkhani
A Low-Power High-Speed Spintronics-Based Neuromorphic Computing System Using Real-Time Tracking Method. IEEE J. Emerg. Sel. Topics Circuits Syst. 8(3): 627-638 (2018) - [c6]Seyed Hamid Fani, Ali Peiravi, Hooman Farkhani, Farshad Moradi
A Novel TFET 8T-SRAM Cell with Improved Noise Margin and Stability. DDECS 2018: 39-44 - 2017
- [j5]Hooman Farkhani
STT-RAM Energy Reduction Using Self-Referenced Differential Write Termination Technique. IEEE Trans. Very Large Scale Integr. Syst. 25(2): 476-487 (2017) - [c5]Hooman Farkhani, Mohammad Tohidi, Sadaf Farkhani, Jens Kargaard Madsen, Farshad Moradi
An energy efficient neuromorphic computing system using real time sensing method. BioCAS 2017: 1-4 - 2016
- [j4]Hooman Farkhani, Ali Peiravi, Farshad Moradi
Low-Energy Write Operation for 1T-1MTJ STT-RAM Bitcells With Negative Bitline Technique. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1593-1597 (2016) - 2015
- [j3]Hooman Farkhani, Ali Peiravi, Farshad Moradi
A new write assist technique for SRAM design in 65 nm CMOS technology. Integr. 50: 16-27 (2015) - [c4]Hooman Farkhani, Ali Peiravi, Jens Kargaard Madsen, Farshad Moradi
STT-RAM write energy consumption reduction by differential write termination method. ISCAS 2015: 2936-2939 - [c3]Hooman Farkhani, Ali Peiravi, Jens Kargaard Madsen, Farshad Moradi
Symmetric write operation for 1T-1MTJ STT-RAM cells using negative bitline technique. SoCC 2015: 215-220 - 2014
- [j2]Farshad Moradi
Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology. Microelectron. J. 45(1): 23-34 (2014) - [j1]Hooman Farkhani, Ali Peiravi
A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology. Microelectron. J. 45(11): 1556-1565 (2014) - [c2]Hooman Farkhani, Ali Peiravi
Comparative study of FinFETs versus 22nm bulk CMOS technologies: SRAM design perspective. SoCC 2014: 449-454
2000 – 2009
- 2008
- [c1]Hooman Farkhani, Mohammad Maymandi-Nejad, Manoj Sachdev:
A fully digital ADC using a new delay element with enhanced linearity. ISCAS 2008: 2406-2409
Coauthor Index
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