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Richard Lossy

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2010 – 2019

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2018
[c1]
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  dblp key:
  - conf/ieeesensors/ChaturvediLSKMC18
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  - https://dblp.org/rec/conf/ieeesensors/ChaturvediLSKMC18
Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl:
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. IEEE SENSORS 2018: 1-3
2014
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  - journals/mr/IvoCKSLZMWTGB14
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Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit:
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. Microelectron. Reliab. 54(6-7): 1288-1292 (2014)
2012
[j5]
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  - journals/mr/LossyBW12
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Richard Lossy, Hervé Blanck, Joachim Würfl:
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52(9-10): 2144-2148 (2012)
2011
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Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle:
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51(2): 217-223 (2011)
[j3]
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  - journals/mr/WuerflBBCHIKKLSSWZ11
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Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska:
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51(9-11): 1710-1716 (2011)

2000 – 2009

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2009
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  - journals/mr/GlowackiLBIBPLWT09
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Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle:
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49(9-11): 1211-1215 (2009)
2004
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  - journals/mr/SozzaDMGHDCLW04
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A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl:
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44(9-11): 1369-1373 (2004)

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