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Russ Houghton

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2005
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Joseph T. Kennedy, Randy Mooney, Robert Ellis, James E. Jaussi, Shekhar Borkar, Jung-Hwan Choi, Jae-Kwan Kim, Chan-Kyong Kim, Woo-Seop Kim, Chang-Hyun Kim, Soo-In Cho, Steffen Loeffler, Jochen Hoffmann, Wolfgang Hokenmaier, Russ Houghton, Thomas Vogelsang:
A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems. IEEE J. Solid State Circuits 40(1): 233-244 (2005)

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