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Gengchiau Liang
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2020 – today
- 2024
- [c7]Xuanqi Chen, Gan Liu, Wei Shi, Yuye Kang, Qiwen Kong, Yuxuan Wang, Rui Shao, Bich-Yen Nguyen, Gengchiau Liang, Kaizhen Han, Xiao Gong:
Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K. VLSI Technology and Circuits 2024: 1-2 - [c6]Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
First Demonstration of BEOL-Compatible 3D Vertical FeNOR. VLSI Technology and Circuits 2024: 1-2 - [c5]Gan Liu, Qiwen Kong, Zuopu Zhou, X. Ying, Chen Sun, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Yang Feng, Wei Shi, Bich-Yen Nguyen, N. Kai, Gengchiau Liang, Xiao Gong:
Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors. VLSI Technology and Circuits 2024: 1-2 - [c4]Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Gan Liu, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c3]Gerui Zheng, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong:
Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature. VLSI Technology and Circuits 2023: 1-2 - [i2]Sheng Luo, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang:
Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing. CoRR abs/2302.02305 (2023) - [i1]Yihan He, Sheng Luo, Chao Fang, Gengchiau Liang:
Ground-State Probabilistic Logic with the Simplest Binary Energy Landscape for Probabilistic Computing. CoRR abs/2311.00410 (2023)
2010 – 2019
- 2017
- [c2]Yuan Dong, Wei Wang, Shengqiang Xu, Dian Lei, Xiao Gong, Shuh Ying Lee, Wan Khai Loke, Soon-Fatt Yoon, Gengchiau Liang, Yee-Chia Yeo:
Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 μm. OFC 2017: 1-3 - 2015
- [c1]Yuan Dong, Wei Wang, Dian Lei, Xiao Gong, Qian Zhou, Shuh Ying Lee, Wan Khai Loke, Soon-Fatt Yoon, Gengchiau Liang, Yee-Chia Yeo:
Germanium-tin on Silicon p-i-n photodiode with low dark current due to sidewall surface passivation. OFC 2015: 1-3
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