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Matthew J. Breitwisch
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2010 – 2019
- 2013
- [j3]Bryan L. Jackson, Bipin Rajendran, Gregory S. Corrado, Matthew J. Breitwisch, Geoffrey W. Burr, Roger Cheek, Kailash Gopalakrishnan, Simone Raoux, Charles T. Rettner, Alvaro Padilla, Alejandro G. Schrott, Rohit S. Shenoy, Bülent N. Kurdi, Chung Hon Lam, Dharmendra S. Modha:
Nanoscale electronic synapses using phase change devices. ACM J. Emerg. Technol. Comput. Syst. 9(2): 12:1-12:20 (2013) - 2011
- [c5]Nikolaos Papandreou, Haralampos Pozidis, Aggeliki Pantazi, Abu Sebastian, Matthew J. Breitwisch, Chung Hon Lam, Evangelos Eleftheriou:
Programming algorithms for multilevel phase-change memory. ISCAS 2011: 329-332 - 2010
- [c4]Nikolaos Papandreou, Aggeliki Pantazi, Abu Sebastian, Matthew J. Breitwisch, Chung Hon Lam, Haralampos Pozidis, Evangelos Eleftheriou:
Multilevel phase-change memory. ICECS 2010: 1017-1020
2000 – 2009
- 2008
- [j2]Simone Raoux, Geoffrey W. Burr, Matthew J. Breitwisch, Charles T. Rettner, Yi-Chou Chen, Robert M. Shelby, Martin Salinga, Daniel Krebs, Shih-Hung Chen, Hsiang-Lan Lung, Chung Hon Lam:
Phase-change random access memory: A scalable technology. IBM J. Res. Dev. 52(4-5): 465-480 (2008) - 2005
- [c3]Matthew J. Breitwisch, Chung Hon Lam, Jeffrey B. Johnson, Steven W. Mittl, Jian W. Zhu:
A novel CMOS compatible embedded nonvolatile memory with zero process adder. MTDT 2005: 9-12 - 2004
- [c2]John J. Pekarik, David R. Greenberg, Basanth Jagannathan, Robert A. Groves, J. R. Jones, Raminderpal Singh, Anil Chinthakindi, Xudong Wang, Matthew J. Breitwisch, Douglas D. Coolbaugh, Peter E. Cottrell, John E. Florkey, Greg G. Freeman, R. Krishnasamy:
RFCMOS technology from 0.25μm to 65nm: the state of the art. CICC 2004: 217-224 - 2003
- [j1]Randy W. Mann, W. W. (Bill) Abadeer, Matthew J. Breitwisch, O. Bula, Jeff S. Brown, Bryant C. Colwill, Peter E. Cottrell, William T. Crocco Jr., Stephen S. Furkay, Michael J. Hauser, Terence B. Hook, Dennis Hoyniak, James M. Johnson, Chung Hon Lam, Rebecca D. Mih, J. Rivard, Atsushi Moriwaki, E. Phipps, Christopher S. Putnam, BethAnn Rainey, James J. Toomey, Mohammad Imran Younus:
Ultralow-power SRAM technology. IBM J. Res. Dev. 47(5-6): 553-566 (2003) - [c1]Edward J. Nowak, Thomas Ludwig, Ingo Aller, Jakub Kedzierski, M. Leong, BethAnn Rainey, Matthew J. Breitwisch, V. Gemhoefer, Joachim Keinert, David M. Fried:
Scaling beyond the 65 nm node with FinFET-DGCMOS. CICC 2003: 339-342
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