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Michael Waltl
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2020 – today
- 2024
- [c22]Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3 - [c21]Margareta V. Stephanie, Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk:
Neural Network with Optical Frequency-Coded ReLU. OFC 2024: 1-3 - 2023
- [c20]Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser:
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS 2023: 1-7 - 2022
- [c19]Christoph Wilhelmer, Dominic Waldhoer
, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser:
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. ESSDERC 2022: 376-379 - [c18]Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder:
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS 2022: 1-8 - [c17]Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu:
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS 2022: 10 - [c16]Margareta V. Stephanie, Michael Waltl, Tibor Grasser, Bernhard Schrenk:
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. OFC 2022: 1-3 - 2021
- [c15]Syed Farah Naz, Ambika Prasad Shah
Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata. ETS 2021: 1-2 - [c14]Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl:
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS 2021: 1-6 - 2020
- [c13]Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS 2020: 1-6 - [c12]Alexander Grill, Erik Bury, Jakob Michl
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS 2020: 1-6 - [c11]Jakob Michl
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS 2020: 1-6 - [c10]Michael Waltl
Defect Spectroscopy in SiC Devices. IRPS 2020: 1-9
2010 – 2019
- 2019
- [c9]Ambika Prasad Shah
Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits. ICECS 2019: 197-200 - [c8]Ambika Prasad Shah
Utilizing NBTI for Operation Detection of Integrated Circuits. VDAT 2019: 190-201 - 2018
- [j2]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [j1]Gerhard Rzepa
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [c7]Yury Yu. Illarionov
Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio. DRC 2018: 1-2 - [c6]Tibor Grasser, Bernhard Stampfer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - [c5]Yury Yu. Illarionov
Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS 2018: 5 - 2017
- [c4]Theresia Knobloch
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC 2017: 284-287 - 2015
- [c3]Yury Illarionov
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC 2015: 172-175 - [c2]Yury Illarionov
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. IRPS 2015: 2 - 2014
- [c1]Tibor Grasser
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4
Coauthor Index
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