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Carlo Cagli
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2020 – today
- 2022
- [c5]Ahmed Trabelsi, Carlo Cagli, Tifenn Hirtzlin, Olga Cueto, Marie Claire Cyrille, Elisa Vianello, Valentina Meli, Veronique Sousa, Guillaume Bourgeois, François Andrieu:
Frequency modulation of conductance level in PCM device for neuromorphic applications. ESSCIRC 2022: 129-132
2010 – 2019
- 2019
- [c4]Carlo Cagli, Luca Perniola, Fred Gaillard, Stefan Dünkel, Thomas Melde, B. Mueller, Martin Trentzsch, Sven Wittek, Sven Beyer:
Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning. IRPS 2019: 1-4 - 2018
- [c3]Gilbert Sassine, Cecile Nail, Luc Tillie, Diego Alfaro Robayo, Alexandre Levisse, Carlo Cagli, Khalil El Hajjam, Jean-Francois Nodin, Elisa Vianello, Mathieu Bernard, Gabriel Molas, Etienne Nowak
:
Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications. IRPS 2018: 2-1 - 2017
- [j1]Alberto Rodriguez-Fernandez
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. Microelectron. Reliab. 76-77: 178-183 (2017) - 2015
- [c2]M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, Eric Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, Simon Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola:
Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. ESSDERC 2015: 266-269 - 2012
- [c1]Elisa Vianello, Carlo Cagli, Gabriel Molas, Emeline Souchier, Philippe Blaise, Catherine Carabasse, G. Rodriguez, V. Jousseaume, Barbara De Salvo, Florian Longnos, Faiz Dahmani, P. Verrier, D. Bretegnier, J. Liebault:
On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories. ESSDERC 2012: 278-281 - 2010
- [b1]Carlo Cagli:
Electrical characterization and modeling of resistance switching nio-based random accss memories. Polytechnic University of Milan, Italy, 2010
Coauthor Index
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