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Dong Myong Kim
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2020 – today
- 2024
- [j10]Tae Jun Yang
, Jung Rae Cho
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor. IEEE Access 12: 28531-28537 (2024) - 2023
- [j9]Dongyeon Kang
Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor. IEEE Access 11: 20196-20201 (2023) - 2021
- [j8]Yongwoo Lee
Humidity Effects According to the Type of Carbon Nanotubes. IEEE Access 9: 6810-6816 (2021) - [j7]Dongyeon Kang
Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System. IEEE Access 9: 59345-59352 (2021) - [c2]Yongwoo Lee
Vertical and lateral charge losses during short time retention in 3-D NAND flash memory. ESSDERC 2021: 279-282 - 2020
- [j6]Jun Tae Jang
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System. IEEE Access 8: 192304-192311 (2020)
2010 – 2019
- 2019
- [j5]Mihee Uhm, Jin-Moo Lee, Jieun Lee, Jung Han Lee, Sungju Choi
Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors. Sensors 19(20): 4502 (2019) - [c1]Sungju Choi, Jungmok Kim, Jinsu Yoon, Inseok Chae, Sung-Jin Choi, Dong Myong Kim
The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution. ESSDERC 2019: 110-113 - 2018
- [j4]Junyeap Kim, Hanbin Yoo, Heesung Lee, Seong Kwang Kim, Sungju Choi
Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length. Microelectron. Reliab. 85: 66-70 (2018)
2000 – 2009
- 2008
- [j3]Se Woon Kim, Kang Seob Roh, Seung Hwan Seo, Kwan Young Kim, Gu Cheol Kang, Sunyeong Lee, Chang Min Choi, So Ra Park, Jun Hyun Park, Ki Chan Chun, Kwan Jae Song, Dae Hwan Kim
Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation. Microelectron. Reliab. 48(3): 382-388 (2008) - 2007
- [j2]Jin-Gu Lee, Dae Hwan Kim
A compact HSPICE macromodel of resistive RAM. IEICE Electron. Express 4(19): 600-605 (2007) - 2005
- [j1]Kyeong-Sik Min, Kouichi Kanda, Hiroshi Kawaguchi
Row-by-Row Dynamic Source-Line Voltage Control (RRDSV) Scheme for Two Orders of Magnitude Leakage Current Reduction of Sub-1-V-VDD SRAM's. IEICE Trans. Electron. 88-C(4): 760-767 (2005)
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