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BCICTS 2020: Monterey, CA, USA
- IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020. IEEE 2020, ISBN 978-1-7281-9749-4
- Yuta Shiratori, Takuya Hoshi
, Hideaki Matsuzaki:
Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate. 1-4 - Zhanbo Xia, Nidhin Kurian Kalarickal
Materials and Device Engineering for High-Performance Gallium Oxide Devices. 1-6 - Vadim Issakov
A 10 mW LNA with Temperature Compensation for 24 GHz Radar Applications in SiGe BiCMOS. 1-4 - Mantas Sakalas, Paulius Sakalas:
Design of a wideband, 4 - 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT Technology. 1-4 - Luis A. Valenzuela, Aaron Maharry, Hector Andrade, Clint L. Schow, James F. Buckwalter:
A 108-Gbps, 162-mW Cherry-Hooper Transimpedance Amplifier. 1-4 - Abdulrahman A. Alhamed, Gabriel M. Rebeiz:
A 28-37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers. 1-4 - Xiaodi Jin
Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. 1-4 - Lars-Erik Wernersson:
III-V Nanowire MOSFETs: RF-Properties and Applications. 1-4 - Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao, Jose Jimenez:
Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology. 1-4 - Pilsoon Choi, Bugra Kanargi, Kenneth E. Lee, Chirn Chye Boon, Evelyn Wang, Chuan Seng Tan, Dimitri A. Antoniadis, Eugene A. Fitzgerald:
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications. 1-4 - Shuoqi Chen, Vipan Kumar, Yu Cao:
A High Efficiency 4-18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology. 1-4 - Lukas Polzin
A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider. 1-4 - Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. 1-4 - Sourabh Khandelwal
SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch. 1-4 - Paul J. Tasker:
Robust Extraction of Cardiff Model Parameters from Appropriately Tailored Measured Load-Pull Data. 1-5 - Arya Moradinia, Rafael Perez Martinez, Jeffrey W. Teng
Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver. 1-5 - Florian Vogelsang, David Starke
A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology. 1-4 - Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor. 1-4 - Lorenzo Paolozzi
Fast pixel sensors for ionizing particles integrated in SiGe BiCMOS. 1-6 - Gregory M. Flewelling:
Broadband Reconfigurable Transceivers in SiGe. 1-4 - Sherif S. Ahmed:
Trends in Imaging Radars Powered by Modern Silicon. 1-4 - Mostafa Hosseini, Aydin Babakhani:
A Fully Integrated 20-500-GHz Coherent Detector with 2-Hz Frequency Resolution. 1-4 - K. Moore, B. Green, S. Klingbeil, C. Rampley, P. Renaud, D. Burdeaux, D. Hill, C. Zhu, J. Wan, J. Finder, K. Kim, C. Gaw, T. Arnold, F. Vanaverbeke, R. Embar, P. Rashev, M. Masood:
High Performance 150 mm RF GaN Technology with Low Memory Effects. 1-4 - Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao:
18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA. 1-4 - Andries J. Scholten:
Modeling and characterization of HBT limits. 1-8 - Michael Schröter, Andreas Pawlak, Anindya Mukherjee, Didier Céli, Mario Krattenmacher:
HICUM/L2: Extensions over the last decade. 1-4 - Chunlei Wu, Jeffrey Smith, Suman Datta, Yu Cao, Jinqiao Xie, Edward Beam, Patrick Fay:
Microwave Performance of Ferroelectric-Gated GaN HEMTs. 1-4 - Timothy M. Hancock
The DARPA Millimeter Wave Digital Arrays (MIDAS) Program. 1-4 - James Schellnberg:
Millimeter-Wave GaN SSPAs: Technology to Power 5G and the Future. 1-7 - Uppili S. Raghunathan, Pui Yee, Dave Brochu, Vibhor Jain, Harrison P. Lee, John D. Cressler, Dimitris P. Ioannou:
Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs. 1-4 - Aniello Franzese, Mohamed Hussein Eissa, Thomas Mausolf, Dietmar Kissinger, Renato Negra, Andrea Malignaggi:
Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS. 1-4 - Teruo Jyo, Munehiko Nagatani, Minoru Ida, Miwa Mutoh, Hitoshi Wakita, Naoki Terao, Hideyuki Nosaka
An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT. 1-4 - Sourabh Khandelwal
Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs. 1-4 - Seokchul Lee, Inchan Ju, Yunyi Gong, Adilson S. Cardoso, Jeffrey D. Connor, Moon-Kyu Cho, John D. Cressler:
Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier. 1-4 - Philipp Thomas
128-GS/s 1-to-4 SiGe Analog Demultiplexer with 36-GHz Bandwidth for 6-bit Data Converters. 1-4 - Michael J. Uren, Martin Kuball:
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer. 1-8 - Tiantong Ren, Sandeep Hari, Brian A. Floyd
A 20-33 GHz Direct-Conversion Transmitter in 45-nm SOI CMOS. 1-4 - Takaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto:
A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications. 1-4 - Christian Koos, Sebastian Randel, Wolfgang Freude
Photonic-Electronic Ultra-Broadband Signal Processing: Concepts, Devices, and Applications. 1-3 - Michael Collisi, Michael Möller:
A 120 GS/s 2: 1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology. 1-4 - Edward Preisler:
A Commercial Foundry Perspective of SiGe BiCMOS Process Technologies. 1-5 - Anton N. Atanasov, Mark S. Oude Alink
Reverse Intermodulation in Multi-Tone Array Transmitters. 1-4 - Joseph C. Bardin
Analog/Mixed-Signal Integrated Circuits for Quantum Computing. 1-8 - Yingying Yang, Xiao Ping Li, Cristian Cismaru, Ravi Ramanathan:
Using Channel Physical Relationships in pHEMT Modeling. 1-4 - Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology. 1-4 - Alessio Spessot, Bertrand Parvais, Amita Rawat
Device Scaling roadmap and its implications for Logic and Analog platform. 1-8 - Yu Yan, Thanh Ngoc Thi Do, Dan Kuylenstierna:
A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT Technology. 1-3 - Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo:
A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications. 1-4 - Clifford D. Y. Cheon, Moon-Kyu Cho, Sunil G. Rao, Adilson S. Cardoso, Jeffrey D. Connor, John D. Cressler:
A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator. 1-5 - Zerihun Gedeb Tegegne, Marc D. Rosales, Francesco Peressutti, Jean-Marc Laheurte, Catherine Algani, Jacopo Nanni
SiGe Microwave Phototransistors for Microwave-Photonics Applications. 1-7 - Nivedhita Venkatesan, Jeong-Sun Moon, Joel Wong, Bob Grabar, Michael Antcliffe, Peter Chen, Erdum Arkun, Isaac Khalaf, David Fanning, Patrick Fay:
RF Performance of GaN-Based Graded-Channel HEMTs. 1-4 - Sri Navaneeth Easwaran
Configurable and Scalable High-Side or Low-Side Driver in BiCMOS with 20dBµV Emission at 88MHz. 1-4
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