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"Cross-cell interference variability aware model of fully planar NAND Flash ..."

Pavel Poliakov et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.12.010

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/PoliakovBCHD11
Pavel Poliakov, Pieter Blomme, Miguel Corbalan, Jan Van Houdt, Wim Dehaene:
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. Microelectron. Reliab. 51(5): 919-924 (2011)

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