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"Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise ..."

Zhiting Lin et al. (2021)

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DOI: 10.1109/TCSII.2021.3057678

access: closed

type: Journal Article

metadata version: 2023-05-03

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  - journals/tcasII/LinLWPLZ21
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  - https://dblp.org/rec/journals/tcasII/LinLWPLZ21
Zhiting Lin, Luanyun Li, Xiulong Wu, Chunyu Peng, Wenjuan Lu, Qiang Zhao:
Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption. IEEE Trans. Circuits Syst. II Express Briefs 68(7): 2628-2632 (2021)

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