default search action
"Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI."
K. R. Khiangte Amlta et al. (2018)
- K. R. Khiangte Amlta, A. Laha, S. Mahapatra, U. Gangway:
Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI. DRC 2018: 1-2
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.