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Shamin H. Sharifi
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2020 – today
- 2023
- [c9]Gaspard Hiblot, Taras Ravsher, Roger Loo
, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar:
NPN Si/SiGe memory selector with non-linearity>105 and ON-current>6MA/cm2. ESSDERC 2023: 164-167 - [c8]Subhali Subhechha, Stefan Cosemans, Attilio Belmonte, Nouredine Rassoul, Shamin Houshmand Sharifi, Peter Debacker, Diederik Verkest, Romain Delhougne, Gouri Sankar Kar:
Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays. IMW 2023: 1-4 - 2022
- [c7]S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, K. Banerjee, H. Puliyalil, Shreya Kundu, M. Pak, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar:
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. ICICDT 2022: 88 - [c6]Taras Ravsher
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS 2022: 10-1 - [c5]S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. VLSI Technology and Circuits 2022: 292-293 - 2021
- [c4]Sidharth Rao
STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application. IMW 2021: 1-4 - [c3]Taras Ravsher
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW 2021: 1-4 - [c2]Simon Van Beek, Siddharth Rao
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. IRPS 2021: 1-5
2010 – 2019
- 2019
- [c1]Kevin Garello, Farrukh Yasin, Hubert Hody, S. Couet
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM. VLSI Circuits 2019: 194-
Coauthor Index
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