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Massimo Rudan
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2010 – 2019
- 2016
- [c5]Enrico Piccinini, Massimo Rudan, Rossella Brunetti:
Closed-form transition rate in hopping conduction. ESSDERC 2016: 315-318 - [c4]Manel Hammami
, Gabriele Grandi
An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems. IECON 2016: 3024-3029 - 2014
- [c3]Enrico Piccinini, Massimo Rudan, Fabrizio Buscemi, Rossella Brunetti
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides. ESSDERC 2014: 126-129 - 2013
- [c2]Giuliano Marcolini, Fabio Giovanardi, Massimo Rudan, Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti
Modeling the dynamic self-heating of PCM. ESSDERC 2013: 346-349
2000 – 2009
- 2002
- [j19]Elena Gnani
Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21(7): 791-798 (2002) - 2001
- [j18]Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan:
Calculation of Transport Parameters of SiO2 Polymorphs. VLSI Design 13(1-4): 311-315 (2001) - 2000
- [j17]Susanna Reggiani
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. VLSI Design 10(4): 467-483 (2000)
1990 – 1999
- 1998
- [j16]Rossella Brunetti, Maria Cristina Vecchi, Massimo Rudan:
Monte Carlo Analysis of Anisotropy in the Transport Relaxation Times for the Hydrodynamic Model. VLSI Design 6(1-4): 161-165 (1998) - [j15]Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala:
Recent Advances in Device Simulation Using Standard Transport Models. VLSI Design 6(1-4): 223-237 (1998) - [j14]Maria Cristina Vecchi, Jan Mohring, Massimo Rudan:
An Efficient Solution Scheme for the Spherical-Harmonics Expansion of the Boltzmann Transport Equation Applied to Two-Dimensional Devices. VLSI Design 6(1-4): 239-242 (1998) - [j13]Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan:
Transient Analysis of Silicon Devices Using the Hydrodynamic Model. VLSI Design 6(1-4): 283-286 (1998) - [j12]Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan:
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE. VLSI Design 8(1-4): 361-365 (1998) - 1997
- [j11]Maria Cristina Vecchi, Jan Mohring, Massimo Rudan:
An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation [MOS transistors]. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 16(4): 353-361 (1997) - 1996
- [j10]Aurelio Pellegrini, Luigi Colalongo, Marina Valdinoci, Massimo Rudan:
AC analysis of amorphous silicon devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 15(11): 1324-1331 (1996) - [c1]Giorgio Baccarani, Massimo Rudan, M. Lorenzini, Wolfgang Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli:
Device simulation for smart integrated systems (DESSIS). ICECS 1996: 752-755 - 1995
- [j9]Massimo Rudan, Giorgio Baccarani:
On the Structure and Closure-Condition of the Hydrodynamic Model. VLSI Design 3(2): 115-129 (1995) - 1993
- [j8]Maria Cristina Vecchi, Massimo Rudan, Giovanni Soncini:
Numerical simulation of optical devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(10): 1557-1569 (1993) - 1991
- [j7]Zsolt Miklós Kovács-Vajna, Massimo Rudan:
Boundary fitted coordinated generation for device analysis on composite and complicated geometries. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10(10): 1242-1250 (1991) - [j6]Wolfgang Quade, Massimo Rudan, Eckehard Schöll:
Hydrodynamic simulation of impact-ionization effects in p-n junctions. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10(10): 1287-1294 (1991) - 1990
- [j5]Paolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani:
Three-dimensional simulation of VLSI structures. Eur. Trans. Telecommun. 1(3): 301-306 (1990) - [j4]Antonio Gnudi
Investigation of non-local transport phenomena in small semiconductor devices. Eur. Trans. Telecommun. 1(3): 307-312 (1990)
1980 – 1989
- 1989
- [j3]Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(5): 490-500 (1989) - 1988
- [j2]Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 231-242 (1988) - 1987
- [j1]Antonio Gnudi
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6(5): 879-885 (1987)
Coauthor Index
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