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Kristy A. Campbell
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2020 – today
- 2021
- [j6]Scott Stoller, Kristy A. Campbell:
Demonstration of Three True Random Number Generator Circuits Using Memristor Created Entropy and Commercial Off-the-Shelf Components. Entropy 23(3): 371 (2021)
2010 – 2019
- 2019
- [p2]Kristy A. Campbell:
The Self-directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer. Handbook of Memristor Networks 2019: 815-842 - 2017
- [j5]Kristy A. Campbell:
Self-directed channel memristor for high temperature operation. Microelectron. J. 59: 10-14 (2017) - 2016
- [j4]Yi Huang, Jin Tang, Yu Cheng, Husheng Li, Kristy A. Campbell, Zhu Han:
Real-Time Detection of False Data Injection in Smart Grid Networks: An Adaptive CUSUM Method and Analysis. IEEE Syst. J. 10(2): 532-543 (2016) - 2015
- [j3]Arthur H. Edwards, Hugh J. Barnaby, Kristy A. Campbell, Michael N. Kozicki, Wei Liu, Matthew J. Marinella:
Reconfigurable Memristive Device Technologies. Proc. IEEE 103(7): 1004-1033 (2015) - 2014
- [j2]Yi Huang, Mohammad Esmalifalak, Yu Cheng, Husheng Li, Kristy A. Campbell, Zhu Han:
Adaptive Quickest Estimation Algorithm for Smart Grid Network Topology Error. IEEE Syst. J. 8(2): 430-440 (2014) - [p1]Robinson E. Pino, Antonio S. Oblea, Kristy A. Campbell:
Memristor SPICE Model Simulation and Device Hardware Correlation. Cybersecurity Systems for Human Cognition Augmentation 2014: 169-174 - 2011
- [c3]Yi Huang, Husheng Li, Kristy A. Campbell, Zhu Han:
Defending false data injection attack on smart grid network using adaptive CUSUM test. CISS 2011: 1-6 - 2010
- [c2]Antonio S. Oblea, Achyut Timilsina, David Moore, Kristy A. Campbell:
Silver chalcogenide based memristor devices. IJCNN 2010: 1-3 - [c1]Robinson E. Pino, James W. Bohl, Nathan R. McDonald, Bryant T. Wysocki, Peter J. Rozwood, Kristy A. Campbell, Antonio S. Oblea, Achyut Timilsina:
Compact method for modeling and simulation of memristor devices: Ion conductor chalcogenide-based memristor devices. NANOARCH 2010: 1-4
2000 – 2009
- 2007
- [j1]Kristy A. Campbell, Christopher M. Anderson:
Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers. Microelectron. J. 38(1): 52-59 (2007)
Coauthor Index
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