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Fanyu Liu
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2020 – today
- 2024
- [j4]Kai Xiao, Haihua Wang, Hui Xie, Siyuan Li, Zekun Zhao, Ziyue Cui, Qiumeng Chen, Peng Zhou, Fanyu Liu, Yong Xu, Yu-Long Jiang, Jing Wan:
A Novel NH3 Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature. IEEE Trans. Instrum. Meas. 73: 1-6 (2024) - [c5]Yuchen Wu, Fanyu Liu, Bo Li, Jiangjiang Li, Siyuan Chen, Yang Huang, Jiamin Li, Tiexin Zhang, Jing Wan, Yong Xu:
Research on the Latch-Up Mechanism of DSOI at High Temperature. IRPS 2024: 16 - 2023
- [j3]Xinan Yue, Fanyu Liu, Junyi Wang, Yonghui Wang, Yihui Cai, Feng Ding, Baiqi Ning, Mingyuan Li, Ning Zhang, Zhongqiu Wang, Su Xu:
On the Ion Line Calibration by Plasma Line in ISR Measurements. Remote. Sens. 15(6): 1553 (2023) - [c4]Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan:
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. IRPS 2023: 1-6 - 2022
- [c3]Xu Zhang, Fanyu Liu, Bo Li, Siyuan Chen, Yang Huang, Jiangjiang Li, Jian Jiao, Tianchun Ye, Jiajun Luo:
The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology. APCCAS 2022: 532-535 - [c2]Junjun Zhang, Fanyu Liu, Bo Li, Yang Huang, Siyuan Chen, Yuchong Wang, Jiajun Luo, Jing Wan:
Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology. IRPS 2022: 18-1 - 2021
- [j2]Ran Cheng, Ying Sun, Yiming Qu, Wei Liu, Fanyu Liu, Jianfeng Gao, Nuo Xu, Bing Chen:
Nano-scaled transistor reliability characterization at nano-second regime. Sci. China Inf. Sci. 64(10) (2021)
2010 – 2019
- 2015
- [c1]Mukta Singh Parihar, Fanyu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu:
Back-gate effects and detailed characterization of junctionless transistor. ESSDERC 2015: 282-285 - 2012
- [j1]Jianjun Chen, Shuming Chen, Bin Liang, Biwei Liu, Fanyu Liu:
Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism. Microelectron. Reliab. 52(6): 1227-1232 (2012)
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