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Asif Islam Khan

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2020 – today

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2024
[c21]
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  - conf/imw2/DasFRSPATCCKWLKKHYDK24
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Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan:
Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation. IMW 2024: 1-4
[c20]
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  - conf/irps/RavikumarRASKDPATYIDMK24
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Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan:
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. IRPS 2024: 1-5
2023
[c19]
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  - conf/imw2/WooCKDY23
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Sola Woo, Gihun Choe, Asif Islam Khan, Suman Datta, Shimeng Yu:
Design of Ferroelectric-Metal Field-Effect Transistor for Multi-Level-Cell 3D NAND Flash. IMW 2023: 1-4
[c18]
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  - conf/irps/PhadkeALKKDY23
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Omkar Phadke, Khandker Akif Aabrar, Yuan-chun Luo, Sharadindu Gopal Kirtania, Asif Islam Khan, Suman Datta, Shimeng Yu:
Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors. IRPS 2023: 1-4
[c17]
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  - conf/vlsit/KirtaniaAKYD23
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Sharadindu Gopal Kirtania, Khandker Akif Aabrar, Asif Islam Khan, Shimeng Yu, Samyak Datta:
Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance. VLSI Technology and Circuits 2023: 1-2
2022
[j1]
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  - journals/aisy/HurLLWLKY22
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Jae Hur, Yuan-Chun Luo, Anni Lu, Tzu-Han Wang, Shaolan Li, Asif Islam Khan, Shimeng Yu:
Nonvolatile Capacitive Crossbar Array for In-Memory Computing. Adv. Intell. Syst. 4(8) (2022)
[c16]
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  - conf/drc/WangTCYCK22
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Zheng Wang, Nujhat Tasneem, Hang Chen, Shimeng Yu, Winston Chern, Asif Islam Khan:
Improved Endurance with Electron-Only Switching in Ferroelectric Devices. DRC 2022: 1-2
[c15]
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Gihun Choe, Prasanna Venkatesan Ravindran, Anni Lu, Jae Hur, Maximilian Lederer, André Reck, Sarah Lombardo, Nashrah Afroze, Josh Kacher, Asif Islam Khan, Shimeng Yu:
Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling. VLSI Technology and Circuits 2022: 336-337
2021
[c14]
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  - conf/aicas/MillerWDKM21
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Nathan Eli Miller, Zheng Wang, Saurabh Dash, Asif Islam Khan, Saibal Mukhopadhyay:
Characterization of Drain Current Variations in FeFETs for PIM-based DNN Accelerators. AICAS 2021: 1-4
[c13]
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  - conf/drc/LinCHKYW21
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Boce Lin, Gihun Choe, Jae Hur, Asif Islam Khan, Shimeng Yu, Hua Wang:
Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave Applications. DRC 2021: 1-2
[c12]
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  - conf/imw2/HurLWSKY21
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Jae Hur, Yuan-Chun Luo, Zheng Wang, Wonbo Shim, Asif Islam Khan, Shimeng Yu:
A Technology Path for Scaling Embedded FeRAM to 28nm with 2T1C Structure. IMW 2021: 1-4
2020
[c11]
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  - conf/drc/LuoHWKY20
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Yuan-Chun Luo, Jae Hur, Panni Wang, Asif Islam Khan, Shimeng Yu:
Modeling Multi-states in Ferroelectric Tunnel Junction. DRC 2020: 1-2

2010 – 2019

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2019
[c10]
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Asif Islam Khan:
Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance? DRC 2019: 57-58
[c9]
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  - conf/drc/WangYTGCMK19
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Zheng Wang, Hanbin Ying, Nujhat Tasneem, Anthony Gaskell, John D. Cressler, Martin Mourigal, Asif Islam Khan:
Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK. DRC 2019: 85-86
[c8]
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  - conf/nvmts/WangWTHKY19
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Panni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu:
Investigating Dynamic Minor Loop of Ferroelectric Capacitor. NVMTS 2019: 1-4
2018
[c7]
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  - conf/drc/TasneemK18
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Nujhat Tasneem, Asif Islam Khan:
On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device. DRC 2018: 1-2
[c6]
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  - conf/iccad/LongNRRKYM18
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Yun Long, Taesik Na, Prakshi Rastogi, Karthik Rao, Asif Islam Khan, Sudhakar Yalamanchili, Saibal Mukhopadhyay:
A ferroelectric FET based power-efficient architecture for data-intensive computing. ICCAD 2018: 32
2017
[c5]
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  - conf/islped/SamalKKSHL17
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Sandeep Kumar Samal, Sourabh Khandelwal, Asif Islam Khan, Sayeef S. Salahuddin, Chenming Hu, Sung Kyu Lim:
Full chip power benefits with negative capacitance FETs. ISLPED 2017: 1-6
2016
[c4]
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  - conf/dac/GeorgeMALKSCDSG16
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Sumitha George, Kaisheng Ma, Ahmedullah Aziz, Xueqing Li, Asif Islam Khan, Sayeef S. Salahuddin, Meng-Fan Chang, Suman Datta, John Sampson, Sumeet Kumar Gupta, Vijaykrishnan Narayanan:
Nonvolatile memory design based on ferroelectric FETs. DAC 2016: 118:1-118:6
2011
[c3]
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  - conf/ismvl/BiswasCKHK11
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Ayan Kumar Biswas, Shuvro Chowdhury, Md. Mahmud Muntakim Khan, Masud Hasan, Asif Islam Khan:
Some Basic Ternary Operations Using Toffoli Gates Along with the Cost of Implementation. ISMVL 2011: 142-146

2000 – 2009

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2009
[c2]
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  - conf/ismvl/KhanBCHK09
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Md. Mahmud Muntakim Khan, Ayan Kumar Biswas, Shuvro Chowdhury, Masud Hasan, Asif Islam Khan:
Synthesis of GF(3) Based Reversible/Quantum Logic Circuits without Garbage Output. ISMVL 2009: 98-102
2007
[c1]
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  - conf/ismvl/KhanNKHK07
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Asif Islam Khan, Nadia Nusrat, Samira Manabi Khan, Masud Hasan, Mozammel H. A. Khan:
Quantum Realization of Some Ternary Circuits Using Muthukrishnan-Stroud Gates. ISMVL 2007: 20

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