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Yunsaing Kim
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2010 – 2019
- 2015
- [j3]Hyunbae Lee, Taeksang Song, Sangyeon Byeon, Kwanghun Lee, Inhwa Jung, Seongjin Kang, Ohkyu Kwon, Koeun Cheon, Donghwan Seol, Jong-Ho Kang, Gunwoo Park, Yunsaing Kim:
A 16.8 Gbps/Channel Single-Ended Transceiver in 65 nm CMOS for SiP-Based DRAM Interface on Si-Carrier Channel. IEEE J. Solid State Circuits 50(11): 2613-2624 (2015) - [c8]Sumin Choi, Heegon Kim, Daniel H. Jung, Jonghoon J. Kim, Jaemin Lim, Hyunsuk Lee, Kyungjun Cho, Joungho Kim, Hyungsoo Kim, Yong-Ju Kim, Yunsaing Kim:
Crosstalk-included eye-diagram estimation for high-speed silicon, organic, and glass interposer channels on 2.5D/3D IC. 3DIC 2015: TS8.25.1-TS8.25.5 - [c7]Hae-Kang Jung, Jaemo Yang, Jeonghun Lee, Hyeongjun Ko, Hyuk Lee, Taeksang Song, Jongjoo Shim, Sangkwon Lee, Keunsoo Song, Dongkyun Kim, Hyungsoo Kim, Yunsaing Kim:
A 4.35Gb/s/pin LPDDR4 I/O interface with multi-VOH level, equalization scheme, and duty-training circuit for mobile applications. VLSIC 2015: 184- - 2014
- [j2]Soo-Min Lee, Il-Min Yi
, Hae-Kang Jung, Hyunbae Lee, Yong-Ju Kim, Yunsaing Kim, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
An 80 mV-Swing Single-Ended Duobinary Transceiver With a TIA RX Termination for the Point-to-Point DRAM Interface. IEEE J. Solid State Circuits 49(11): 2618-2630 (2014) - [c6]Hyunbae Lee, Taeksang Song, Sangyeon Byeon, Kwanghun Lee, Inhwa Jung, Seongjin Kang, Ohkyu Kwon, Koeun Cheon, Donghwan Seol, Jong-Ho Kang, Gunwoo Park, Yunsaing Kim:
A 16.8Gbps/channel single-ended transceiver in 65nm CMOS for SiP based DRAM interface on Si-carrier channel. A-SSCC 2014: 125-128 - [c5]Hyun-Woo Lee, Junyoung Song, Sangah Hyun, Seunggeun Baek, Yuri Lim, Jungwan Lee, Minsu Park, Haerang Choi, Changkyu Choi, Jin-Youp Cha, Jaeil Kim, Hoon Choi, Seung-Wook Kwack, Yonggu Kang, Jongsam Kim, Junghoon Park, Jonghwan Kim, Jin-Hee Cho, Chulwoo Kim, Yunsaing Kim, Jaejin Lee, Byong-Tae Chung, Sung-Joo Hong:
25.3 A 1.35V 5.0Gb/s/pin GDDR5M with 5.4mW standby power and an error-adaptive duty-cycle corrector. ISSCC 2014: 434-435 - 2013
- [c4]Soo-Min Lee, Jong-Hoon Kim, Jong-Sam Kim, Yunsaing Kim, Hyunbae Lee, Jae-Yoon Sim, Hong-June Park:
A 27% reduction in transceiver power for single-ended point-to-point DRAM interface with the termination resistance of 4×Z0 at both TX and RX. ISSCC 2013: 308-309 - [c3]Junyoung Song, Hyun-Woo Lee, Soo-Bin Lim, Sewook Hwang, Yunsaing Kim, Young-Jung Choi, Byong-Tae Chung, Chulwoo Kim:
An adaptive-bandwidth PLL for avoiding noise interference and DFE-less fast precharge sampling for over 10Gb/s/pin graphics DRAM interface. ISSCC 2013: 312-313 - 2012
- [j1]Hyun-Woo Lee, Hoon Choi, Beom-Ju Shin, Kyung-Hoon Kim, Kyung Whan Kim, Jaeil Kim, Kwang Hyun Kim, Jongho Jung, Jae-Hwan Kim, Eun Young Park, Jong-Sam Kim, Jong-Hwan Kim, Jin-Hee Cho, Nam Gyu Rye, Jun Hyun Chun, Yunsaing Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung:
A 1.0-ns/1.0-V Delay-Locked Loop With Racing Mode and Countered CAS Latency Controller for DRAM Interfaces. IEEE J. Solid State Circuits 47(6): 1436-1447 (2012) - [c2]Kibong Koo, Sunghwa Ok, Yonggu Kang, Seungbong Kim, Choungki Song, Hyeyoung Lee, Hyungsoo Kim, Yongmi Kim, Jeonghun Lee, Seunghan Oak, Yosep Lee, Jungyu Lee, Joongho Lee, Hyungyu Lee, Jaemin Jang, Jongho Jung, Byeongchan Choi, Yong-Ju Kim, Youngdo Hur, Yunsaing Kim, Byong-Tae Chung, Yongtak Kim:
A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture. ISSCC 2012: 40-41 - [c1]Hyun-Woo Lee, Soo-Bin Lim, Junyoung Song, Jabeom Koo, Dae-Han Kwon, Jong-Ho Kang, Yunsaing Kim, Young-Jung Choi, Kunwoo Park, Byong-Tae Chung, Chulwoo Kim:
A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface. ISSCC 2012: 48-50
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