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Christophe Muller
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2020 – today
- 2020
- [j8]Tae-Hwan Kim, Christophe Muller
:
Inconsistency transmission and variance reduction in two-stage quantile regression. Commun. Stat. Simul. Comput. 49(4): 1044-1077 (2020)
2010 – 2019
- 2014
- [j7]Weisheng Zhao, Jean-Michel Portal, Wang Kang, Mathieu Moreau
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells. J. Parallel Distributed Comput. 74(6): 2484-2496 (2014) - [j6]Weisheng Zhao, Mathieu Moreau
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(2): 443-454 (2014) - 2013
- [j5]Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau
A novel test structure for OxRRAM process variability evaluation. Microelectron. Reliab. 53(9-11): 1208-1212 (2013) - [c13]Santhosh Onkaraiah, Marc Belleville, Marina Reyboz, Fabien Clermidy, Elisa Vianello, Jean-Michel Portal, Christophe Muller:
A CBRAM-based compact interconnect switch for non-volatile reconfigurable logic circuits. ICICDT 2013: 81-84 - [c12]Santhosh Onkaraiah, Ogun Turkyilmaz, Marina Reyboz, Fabien Clermidy, Elisa Vianello, Jean-Michel Portal, Christophe Muller:
A hybrid CBRAM/CMOS Look-Up-Table structure for improving performance efficiency of Field-Programmable-Gate-Array. ISCAS 2013: 2440-2443 - [c11]Karine Castellani-Coulié, Marc Bocquet, Hassen Aziza, Jean-Michel Portal, Wenceslas Rahajandraibe
SPICE level analysis of Single Event Effects in an OxRRAM cell. LATW 2013: 1-5 - [c10]Jean-Michel Portal, Mathieu Moreau
Analytical study of complementary memristive synchronous logic gates. NANOARCH 2013: 70-75 - [c9]Yue Zhang, Erya Deng, Jacques-Olivier Klein
Synchronous full-adder based on complementary resistive switching memory cells. NEWCAS 2013: 1-4 - 2012
- [j4]Christophe Muller
Models for Identification of Erroneous Atom-to-Atom Mapping of Reactions Performed by Automated Algorithms. J. Chem. Inf. Model. 52(12): 3116-3122 (2012) - [j3]Christophe Muller, Alain Trannoy:
Multidimensional inequality comparisons: A compensation perspective. J. Econ. Theory 147(4): 1427-1449 (2012) - [j2]Jean-Michel Portal, Marc Bocquet, Damien Deleruyelle
Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications. J. Low Power Electron. 8(1): 1-10 (2012) - [c8]Weisheng Zhao, Yue Zhang, Jacques-Olivier Klein, Damien Querlioz, Djaafar Chabi, Dafine Ravelosona, Claude Chappert, Jean-Michel Portal, Marc Bocquet, Hassen Aziza, Damien Deleruyelle
Crossbar architecture based on 2R complementary resistive switching memory cell. NANOARCH 2012: 85-92 - [c7]Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, Jean-Michel Portal, Marc Bocquet, Christophe Muller
Bipolar ReRAM Based non-volatile flip-flops for low-power architectures. NEWCAS 2012: 417-420 - 2011
- [c6]Christophe Muller
Design challenges for prototypical and emerging memory concepts relying on resistance switching. CICC 2011: 1-7 - [c5]Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Christophe Muller
Bipolar OxRRAM memory array reliability evaluation based on fault injection. IDT 2011: 78-81 - [c4]Santhosh Onkaraiah, Pierre-Emmanuel Gaillardon, Marina Reyboz, Fabien Clermidy, Jean-Michel Portal, Marc Bocquet, Christophe Muller
Using OxRRAM memories for improving communications of reconfigurable FPGA architectures. NANOARCH 2011: 65-69 - 2010
- [j1]Iurii Sushko, Sergii Novotarskyi, Robert Körner, Anil Kumar Pandey, Artem Cherkasov, Jiazhong Li, Paola Gramatica
Applicability Domains for Classification Problems: Benchmarking of Distance to Models for Ames Mutagenicity Set. J. Chem. Inf. Model. 50(12): 2094-2111 (2010)
2000 – 2009
- 2009
- [c3]Olivier Ginez, Jean-Michel Portal, Christophe Muller
Design and Test Challenges in Resistive Switching RAM (ReRAM): An Electrical Model for Defect Injections. ETS 2009: 61-66 - 2008
- [c2]Christophe Muller:
Emerging Concepts in Non-volatile Memory Technologies - Era of Resistance Switching Memories. ISVLSI 2008: 3 - 2004
- [c1]Christophe Muller:
Stockage haute densité : une nécessité pour l'informatique, un défi pour la microélectronique. BDA 2004: 17-18
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