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Ekmel Özbay
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2020 – today
- 2024
- [j12]Muhammad Imran Nawaz
, Salahuddin Zafar
Robustness of GaN on SiC low-noise amplifiers in common source and cascode configurations for X-band applications. Int. J. Circuit Theory Appl. 52(8): 4148-4163 (2024) - 2023
- [j11]Ahmet Toprak
Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. Microelectron. J. 135: 105762 (2023) - [c2]Erkut Emin Akbas, Aylin Yertutanol, Tugba Andaç, Ekmel Özbay, Yashar Azizian-Kalandaragh:
Optimization of ASE Light Source Design for Enhancement of Wavelength Stability. SENSORS 2023: 1-4 - 2022
- [j10]Salahuddin Zafar
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications. Int. J. Circuit Theory Appl. 50(7): 2305-2319 (2022) - 2021
- [j9]Bahram Khalichi
A Transparent All-Dielectric Multifunctional Nanoantenna Emitter Compatible With Thermal Infrared and Cooling Scenarios. IEEE Access 9: 98590-98602 (2021) - [j8]Khizar Hayat, Salahuddin Zafar
Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications. IET Circuits Devices Syst. 15(8): 830-841 (2021) - [j7]Batuhan Sutbas
Accurate Isolation Networks in Quadrature Couplers and Power Dividers. IEEE Trans. Circuits Syst. II Express Briefs 68(4): 1148-1152 (2021)
2010 – 2019
- 2016
- [j6]M. Cihan Çakir, Deniz Çaliskan, Bayram Bütün, Ekmel Özbay:
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors. Sensors 16(10): 1612 (2016) - 2014
- [c1]Neval A. Cinel, Serkan Bütün, Ekmel Özbay:
Plasmonic nanoparticle based nanobiosensors and nanophotodetectors. ICTON 2014: 1-5 - 2011
- [j5]Engin Arslan, Serkan Bütün, Yasemin Safak, Habibe Uslu
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures. Microelectron. Reliab. 51(2): 370-375 (2011) - [j4]Engin Arslan, Serkan Bütün, Yasemin Safak
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes. Microelectron. Reliab. 51(3): 576-580 (2011) - [j3]Z. Tekeli, Muharrem Gökçen
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures. Microelectron. Reliab. 51(3): 581-586 (2011) - [j2]S. Demirezen, S. Altindal, Suleyman Özçelik
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods. Microelectron. Reliab. 51(12): 2153-2162 (2011)
2000 – 2009
- 2009
- [j1]S. B. Lisesivdin
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. Microelectron. J. 40(3): 413-417 (2009)
Coauthor Index
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